2SK2617ALS Ordering number : ENA0361A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V 5 A IDc*1 IDpack*2 Drain Current (DC) Drain Current (Pulse) IDP Allowable Power Dissipation PD Channel Temperature Limited only by maximum temperature SANYO’s ideal heat dissipation condition 4.5 A PW≤10µs, duty cycle≤1% 16 A 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition) 25 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *3 EAS 88 mJ Avalanche Current *4 IAV 4 A *1 Shows chip capability *2 Package limited *3 VDD=50V, L=10mH, IAV=4A *4 L≤10mH, single pulse Marking : K2617 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22107 TI IM TC-00000527 / 72006QB MS IM TC-00000026 No. A0361-1/4 2SK2617ALS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Ratings Conditions min typ Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=500V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±30V, VDS=0V VDS=10V, ID=1mA 3.5 yfs RDS(on) VDS=10V, ID=2A 1.1 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance max 500 Unit V 1.0 ±100 5.5 2.2 mA nA V S 550 pF Coss ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz 190 pF Crss VDS=20V, f=1MHz 95 pF VDS=200V, ID=4A, VGS=10V 15 nC ns Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Total Gate Charge Qg 1.2 1.6 Ω Turn-ON Delay Time td(on) See specified Test Circuit. 15 Rise Time tr td(off) See specified Test Circuit. 15 ns See specified Test Circuit. 45 ns tf VSD See specified Test Circuit. Turn-OFF Delay Time Fall Time Diode Forward Voltage 25 IS=4A, VGS=0V Package Dimensions ns 0.95 1.2 V Switching Time Test Circuit unit : mm (typ) 7509-002 VDD=200V 4.5 10.0 2.8 D 16.0 PW=1µs D.C.≤0.5% 16.1 ID=2A RL=100Ω VOUT VGS=15V 7.2 3.5 3.2 0.6 G 1.2 14.0 3.6 0.9 1.2 0.75 2.4 1 2 3 2.55 2.55 P.G RGS 50Ω S 2SK2617ALS 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Avalanche Resistance Test Circuit L ≥50Ω RG 2SK2617ALS 15V 0V 50Ω VDD No. A0361-2/4 2SK2617ALS ID -- VDS 7 Tc=25°C 10V 15V 5 8V 4 3 2 7V 1 25°C 5 75°C 4 3 2 4 6 8 0 10 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 4.0 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3.5 3.0 2.5 2.0 2A ID=4A 1A 1.0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 20 Source Current, IS -- A 3 5°C --2 °C Tc= 5 2 C 75° 1.0 7 5 3 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 0V =1 S G V V 15 A, =2 S= ID G V A, =2 ID 1.9 1.6 1.3 1.0 0.7 0.4 --25 0 2 tr td(on) 10 1.0 2 3 2 3 Drain Current, ID -- A 5 7 IT05197 0.3 0.6 0.9 1.2 1.5 IT05196 ASO PW≤10µs 10 µs 10 0µ s IDP=16A IDc(*1)=5A 1m IDpack(*2)=4.5A 1.0 7 5 10 Operation in this area is limited by RDS(on). 3 2 s m DC 100 s m op era s tio n 0.1 7 5 3 2 7 125 IT05194 VGS=0V 0.1 7 5 3 2 10 7 5 tf 100 Diode Forward Voltage, VSD -- V Drain Current, ID -- A 3 75 1.0 7 5 3 2 3 2 td (off) 5 50 IS -- VSD 0 VDD=200V VGS=15V 7 25 10 7 5 3 2 7 10 IT05195 SW Time -- ID 100 7 2.2 0.01 7 5 3 2 0.001 2 0.1 0.1 2.5 100 7 5 3 2 5 2 2.8 Case Temperature, Tc -- °C VDS=10V 7 20 IT05192 3.1 IT05193 yfs -- ID 10 15 RDS(on) -- Tc 0.1 --50 0.5 0 10 3.4 Tc=25°C 1.5 5 Drain-to-Source Voltage, VDS -- V IT05191 °C 25° C --25 °C 2 Tc= 75 0 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 6 0 0 Forward Transfer Admittance, yfs -- S Tc= --25°C 1 VGS=6V Switching Time, SW Time -- ns VDS=10V 7 Drain Current, ID -- A Drain Current, ID -- A 6 ID -- VGS 8 Tc=25°C Single pulse 0.01 1.0 2 3 *1. Shows chip capability *2. SANYO’s ideal heat dissipation condition 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT10849 No. A0361-3/4 2SK2617ALS PD -- Ta 2.0 1.5 1.0 0.5 0 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT05199 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT05120 EAS -- Ta 120 Avalanche Energy derating factor -- % PD -- Tc 35 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 Note on usage : Since the 2SK2617ALS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No. A0361-4/4