2SK3174A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1451 (Z) 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz) • Compact package Suitable for push - pull circuit Outline RFPAK-F 4 D G D 3 5 G 2 S 1 1. Drain 2. Drain 3. Source 4. Gate 5. Gate This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. In AC testing, the part should be mounted on heat sink with thermal compound. 2SK3174A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current Note1 ID(pulse) Note2 Note3 Ratings Unit 60 V ±10 V 16 A 32 A Channel dissipation Pch 252 W Channel temperature Tch 175 °C Storage temperature Tstg –55 to +150 °C Note: 1. Pin=0, PW ≤ 0.1sec 2. PW ≤ 10ms, duty cycle ≤ 50 % 3. Value at Tc = 25°C Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Test Conditions IDSS — — 1 mA VDS = 60 V, VGS = 0 IGSS — — ±3 µA VGS = ±10 V, VDS = 0 VGS(off) 1.0 2.3 3.0 V ID = 1 mA, VDS = 10 V |yfs| 4.0 6.7 — S VDS=10 V, ID = 5 A Note5 Input capacitance Note4 Ciss — 162 — pF VGS = 5 V, VDS = 0 f = 1 MHz Reverse transfer capacitance Note4 Crss — 4 — pF VDG = 10 V, VGS = 0 f = 1 MHz Output Power Pout 200 270 — W VDS = 28 V, IDQ = 1.2 A f = 860 MHz Pin = 14 W Drain Rational ηD — 64 — % VDS = 28 V, IDQ = 1.2 A f = 860 MHz Pin = 14 W Zero gate voltage drain current Gate to source leak current Note4 Note4 Gate to source cutoff voltage Note4 Forward transfer admittance Note4 Note: 4. Shows 1 unit FET 5. Pulse Test Rev.0, Aug. 2001, page 2 of 8 5 2SK3174A Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating n c (T 5 = o 25 C) I D (A) Drain Current 10 io 100 t ra 200 20 pe 300 O Channel Dissipation 50 DC Pch (W) 400 2 1 0 0.5 50 100 Case Temperature 150 200 1 Tc (°C) Typical Output Characteristics 20 10 V Typical Transfer Characteristics 20 8V V DS = 10 V Pulse Test Shows 1 unit FET 5V 12 Pulse Test Shows 1 unit FET 4V 4 ID (A) 16 Drain Current Drain Current I D (A) 6V 8 10 20 50 100 2 5 Drain to Source Voltage V DS (V) 16 12 8 4 VGS = 3 V 0 2 4 6 Drain to Source Voltage 8 10 VDS (V) 0 1 2 3 4 Gate to Source Voltage 5 6 VGS (V) Rev.0, Aug. 2001, page 3 of 8 Drain to Source Saturation Voltage V DS(on) (V) 10 Drain to Source Saturatioin Voltage vs. Drain Current Forward Transfer Admittance vs. Drain Current 5 2 1 0.5 0.1 0.1 0.2 5 2 1 0.5 0.2 0.1 0.05 V DS = 10 V Pulse Test Shows 1 unit FET 0.2 VGS = 10 V Pulse Test Shows 1 unit FET 0.02 5 10 1 2 Drain Current I D (A) 0.01 0.1 0.2 20 0.5 5 10 20 0.5 1 2 Drain Current I D (A) 50 Input Capacitance vs. Gate to Source Voltage Gate to Source Cutoff Voltage vs. Ambient Temperature 170 3.6 Shows 1 unit FET 1A 3.2 2.8 100 mA 2.4 10 mA ID = 1 2.0 1.6 - 25 mA V DS = 10 V Shows 1 unit FET 0 25 50 75 Ambient Temperature Rev.0, Aug. 2001, page 4 of 8 100 Ta (°C) 125 Input Capacitance Ciss (pF) Gate to Source Cutoff Voltage V GS(off) (V) Forward Transfer Admittance |y fs | (S) 2SK3174A 165 160 155 150 V DS = 0 f = 1 MHz 145 140 -10 -6 -2 2 6 Gate to Source Voltage VGS (V) 10 2SK3174A Reverse Transfer Capacitance Crss (pF) Output Capacitance vs. Drain to Source Voltage Output Capacitance Coss (pF) 1000 500 V GS = 0 f = 1 MHz Shows 1 unit FET 200 100 50 20 10 1 2 5 10 20 50 100 Reverse Transfer Capacitance vs. Drain to Gate Voltage 100 V GS = 0 f = 1 MHz Shows 1 unit FET 50 20 10 5 2 1 1 2 Pout 40 100 0 0 V DS = 28 V I DQ = 1.2 A f = 860 MHz 2 4 6 8 10 Input power Pin (W) 12 20 0 14 Drain Rational η D (%) 60 200 50 100 Drain Rational vs. Output Power ηD 300 20 80 80 Drain Rational η D (%) Output Power Pout (W) 400 10 Drain to Gate Voltege V DG (V) Drain to Source Voltage V DS (V) Output Power, Drain Rational vs. Input Power 5 60 40 20 V DS = 28 V I DQ = 1.2 A f = 860 MHz 0 0 50 100 150 200 250 300 Output Power Pout (W) Rev.0, Aug. 2001, page 5 of 8 2SK3174A Output Power, Drain Rational vs. Frequency 60 150 50 100 40 V DS = 28 V I DQ = 1.2 A Pin = 14 W 0 830 840 850 30 860 870 Frequency f (MHz) Rev.0, Aug. 2001, page 6 of 8 880 20 890 IMD (dBc) ηD 200 90 IM7L IM7H 80 VDS = 28 V IDQ =1.2A fc = 860 MHz ∆ f=1MHz 70 Inter Modulation 70 Drain Rational η D (%) Pout 250 50 100 80 300 Output Power Pout (W) Inter Modulation vs. Total Output Power 60 IM3H 50 IM3L 40 IM5H 30 IM5L 20 30 34 38 Total Output Power 50 46 42 Pout-total (dBm) 2SK3174A Package Dimensions As of July, 2001 (0.5) 29.6 ± 0.5 2-R1.6 11.7 ± 1.0 15.4 ± 0.3 3.2 ± 0.3 2-C1.0 Unit: mm 12.8 ± 0.3 28.4 ± 0.3 9.6 ± 0.3 13.0 ± 0.3 35.6 ± 0.5 Hitachi Code JEDEC JEITA Mass (reference value) 5.67 ± 0.5 4.14 ± 0.3 3.14 ± 0.3 2.5 ± 0.3 (0.1) 38.8 ± 0.5 RFPAK-F – – 17.2 g Rev.0, Aug. 2001, page 7 of 8 2SK3174A Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Aug. 2001, page 8 of 8