Ordering number:ENN6358 N-Channel Silicon MOSFET 2SK3285 DC/DC Converter Applications Features Package Dimensions · Low ON resistance. · 4V drive. unit:mm 2093A [2SK3285] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 20.9 1.2 9.4 0.8 0.4 2 1 : Gate 2 : Drain 3 : Source SANYO : SMP 3 2.7 1 2.55 2.55 unit:mm 2169 [2SK3285] 4.5 10.2 4.5 1 2 3 1.5 1.2 0.8 2.55 2.5 1.6 2.0 9.9 8.8 0.8 1.3 2.55 2.7 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2280 No.6358–1/5 2SK3285 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Ratings Unit 30 V ±20 V ID 40 A Drain Current Drain Current (Pulse) Conditions VDSS VGSS IDP PW≤10µs, duty cycle≤1% 80 A 1.65 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions ID=1mA, VGS=0 IGSS VGS(off) | yfs | VGS=±16V, VDS=0 RDS(on)1 ID=10A, VGS=10V VDS=10V, ID=1mA VDS=10V, ID=10A RDS(on)2 ID=4A, VGS=4.5V Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time Unit max 30 V 1 µA ±10 µA 2.4 V 17 23 mΩ 24 34 mΩ 1.0 12 18 S 1000 pF 410 pF 160 pF td(on) VDS=10V, f=1MHz See specified Test Circuit 11 ns tr See specified Test Circuit 210 ns td(off) See specified Test Circuit 80 ns tf See specified Test Circuit 85 ns Qg VDS=10V, VGS=10V, ID=20A 17 nC 4.0 nC Rise Time Fall Time Total Gate Charge typ VDS=30V, VGS=0 Input Capacitance Turn-OFF Delay Time Ratings min Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A 3.5 Diode Forward Voltage VSD IS=20A, VGS=0 1.0 nC 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=10A RL=1.5Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 50Ω S No.6358–2/5 2SK3285 ID -- VDS 3.0 V 4 3 8 75°C 5 10 6 Tc= V VGS=2.5V 6.0 6 12 Drain Current, ID – A V 4.5 10.0V Drain Current, ID – A 8 7 VDS=10V 14 4 2 2 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS – V 45 40 10A ID=4A 30 25 20 15 10 5 2 4 6 8 10 12 14 16 18 3.0 3.5 =4.5V , V GS I D=4A 0.0V , V S=1 I D=10A G 20 10 0 --75 --50 --25 0 25 50 75 100 125 3 T 2 C 25° 75°C 1.0 7 5 3 2 175 IT00382 VGS(off) -- Tc 2.0 VDS=10V ID=1mA 1.8 25°C c=-- 150 Case Temperature, Tc – ˚C IT00381 VDS=10V 10 7 5 4.0 IT00380 RDS(on) -- Tc 30 20 3 2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 2 0.1 3 5 7 2 1.0 3 5 Drain Current, ID – A 0 --40 7 10 IT00383 IF -- VSD 100 7 5 3 2 VGS=0 --20 0 20 40 60 80 100 Case Temperature, Tc – ˚C 120 IT00384 Ciss, Coss, Crss -- VDS 10000 7 5 f=1MHz --25 °C C 5°C 25° =7 Tc Ciss, Coss, Crss – pF 3 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 2.5 40 yfs -- ID 100 7 5 2.0 50 Cutoff Voltage, VGS(off) – V Forward Transfer Admittance, | yfs | – S Gate-to-Source Voltage, VGS – V 1.5 60 0 0 1.0 Gate-to-Source Voltage, VGS – V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 50 35 0.5 IT00379 Tc=25°C 55 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 0 1.0 RDS(on) -- VGS 60 Forward Current, IF – A --25° 25 C °C 3.5 9 ID -- VGS 16 V 8.0V 10 2 Ciss 1000 7 5 Coss 3 2 Crss 100 7 5 3 2 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD – V 1.1 1.2 IT00385 0 5 10 15 20 Drain-to-Source Voltage, VDS – V 25 30 IT00386 No.6358–3/5 2SK3285 VGS -- Qg 10 Switching Time, SW Time – ns Gate-to-Source Voltage, VGS – V 9 8 7 6 5 4 3 2 2 3 4 5 6 7 8 td(on) 10 7 5 3 2 1.0 0.1 100µs ID=20A 1ms DC 10ms op era tio n Operation in this area is limited by RDS(on). 1.0 7 5 3 2 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 0.01 2 3 5 7 0.1 5 7 1.0 2 3 5 7 10 2 Drain Current, ID – A 3 5 7 100 IT00388 PD -- Ta 1.65 5 7 1.0 2 3 5 7 10 2 3 5 7 100 1.5 1.0 0.5 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C IT00389 PD -- Tc 60 3 0 2 3 Drain-to-Source Voltage, VDS – V 140 160 IT00391 ID -- Tc 60 50 50 Drain Current, ID – A Allowable Power Dissipation, PD – W 100ms Allowable Power Dissipation, PD – W Drain Current, ID – A <10µs 10 7 5 3 2 2 IT00387 2.0 IDP=80A 100 7 5 3 2 tf 3 2 ASO 2 td(off) 100 7 5 9 10 11 12 13 14 15 16 17 Total Gate Charge, Qg – nC tr 2 0 1 VDD=15V VGS=10V 3 1 0 SW Time -- ID 1000 7 5 VDS=10V ID=10A 40 30 20 10 40 30 Limited by package 20 10 0 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT00390 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01019 No.6358–4/5 2SK3285 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6358–5/5