TOSHIBA 2SK3439

2SK3439
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3439
DC-DC Converter
Relay Drive and Motor Drive Applications
Unit: mm
•
Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 70 S (typ.)
•
Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
•
Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
ID
75
IDP
300
PD
125
W
EAS
731
mJ
Avalanche current
IAR
75
A
Repetitive avalanche energy (Note 3)
EAR
12.5
Channel temperature
Tch
Storage temperature range
Tstg
DC
(Note 1)
Pulse (t <
= 1 ms)
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
A
Thermal resistance, channel to case
―
JEITA
SC-97
mJ
TOSHIBA
2-9F1B
150
°C
Weight: 0.74 g (typ.)
−55 to 150
°C
Thermal Characteristics
Characteristics
JEDEC
Symbol
Max
Unit
Rth (ch-c)
1.00
°C/W
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
Note 1: Please use devices on conditions that the channel temperature
is below 150°C.
4
Note 2: VDD = 24 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω,
IAR = 75 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2
3
Marking
※ Lot Number
K3439
※
Type
Month (starting from alphabet A)
Year
(last number of the christian era)
1
2001-12-11
2SK3439
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V


±10
µA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V


100
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30


V
V
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-on time
Switching time
Fall time
VDS = 10 V, ID = 1 mA
1.3

2.5
VGS = 10 V, ID = 38 A

3.8
5.0
VGS = 4 V, ID = 38 A

5.0
10
VDS = 10 V, ID = 38 A
35
70


5450


620


1850


15


30


65


110


116


84


32

VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
ID = 38 A
VOUT
10 V
VGS
0V
tf
VDD ≈ 15 V
Turn-off time
RL = 0.39 Ω
Gate threshold voltage
4.7 Ω
Drain-source breakdown voltage
toff
mΩ
S
pF
ns
Duty <
= 1%, tw = 10 µs
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
VDD ≈ 34 V, VGS = 10 V, ID = 75 A
nC
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don’t connect and ground it.)
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
IDR1



75
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP1



300
A
Continuous drain reverse current
(Note 1, Note 5)
IDR2



1
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP2



4
A
Forward voltage (diode)
VDS2F


−1.5
V
IDR1 = 75 A, VGS = 0 V
Reverse recovery time
trr
IDR = 75 A, VGS = 0 V,

120

ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/µs

180

nC
Note 5: drain, flowing current value between the S2 pin, open the S1 pin
drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
2
2001-12-11
2SK3439
ID – VDS
6
4
10
3.5
80
(A)
(A)
3.3
ID
Drain current
40
3.0
0.2
0.4
0.6
0.8
Drain-source voltage VDS
3.2
60
40
3.0
20
VGS = 2.8 V
VGS = 2.8 V
20
0
0
0
0
1.0
1
(V)
2
Tc = 25°C
(V)
Common source
VDS = 10 V
120
Drain-source voltage VDS
(A)
(V)
Common source
ID
Drain current
5
0.8
Pulse test
80
40
Tc = −55°C
100
0
0
Pulse test
0.6
0.4
ID = 75 A
0.2
38
19
25
2
4
Gate-source voltage
0
0
6
VGS
5
(V)
10
15
Gate-source voltage
Yfs – ID
VGS
20
(V)
RDS (ON) – ID
500
30
Common source
300
Tc = 25°C
100
Drain-source on resistance
RDS (ON) (mΩ)
Tc = −55°C
Yfs
(S)
4
VDS – VGS
ID – VGS
Forward transfer admittance
3
Drain-source voltage VDS
160
100
25
50
30
10
Common source
3
5
10
30
50
Drain current
ID
(A)
100
Pulse test
10
VGS = 4 V
5
10
3
1
VDS = 10 V
Pulse test
5
3
1
Common source
Tc = 25°C
Pulse test
3.4
6
8
10
60
4
ID
80
ID – VDS
100
Common source
Tc = 25°C
Pulse test
Drain current
100
0.5
1
300
3
5
Drain current
3
30
10
ID
50
100
(A)
2001-12-11
2SK3439
RDS (ON) – Tc
IDR – VDS
6
300
Common source
ID = 75 A
19, 38
4
3
2
1
100
10
50
IDR
(A)
VDS = 10 V
Pulse test
30
Drain reverse current
Drain-source on resistance
RDS (ON) (m Ω)
5
10
3
5
5
3
VGS = 0 V
1
1
Common source
0.5
0.3
Tc = 25°C
Pulse test
0
−80
−40
0
40
80
Case temperature Tc
120
0.1
0
160
−0.2
(°C)
−0.4
−0.6
−0.8
Drain-source voltage VDS
Gate threshold voltage Vth (V)
Common source
Coss
1000
Crss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
3
10
Drain-source voltage VDS
ID = 1 mA
Pulse test
2
1
30
0
−80
(V)
−40
0
80
40
Case temperature Tc
PD – Tc
Drain-source voltage VDS
120
80
40
80
120
Case temperature Tc
160
(°C)
VGS
30
VDD = 24 V
20
8
12
10
4
40
80
Total gate charge
4
16
12
6
VDS
0
0
200
20
Common source
ID = 75 A
Tc = 25°C
40
Pulse test
VGS
(V)
160
PD
(W)
(°C)
50
40
160
Dynamic input/output characteristics
200
Drain power dissipation
120
(V)
0.3
VDS = 10 V
3
120
Qg
160
Gate-source voltage
Capacitance
C
(pF)
3000
10
0
(V)
4
Ciss
100
0.1
−1.2
Vth – Tc
Capacitance – VDS
10000
300
−1.0
0
200
(nC)
2001-12-11
2SK3439
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
rth – tw
3
1
Duty = 0.5
0.3
0.2
PDM
0.1
0.1
t
0.05
T
0.02
0.03
0.01
Duty = t/T
Rth (ch-c) = 1.0°C/W
Single
0.01
0.00001
0.0001
0.001
0.01
Pulse width
0.1
tw
1
(s)
EAS – Tch
Safe operating area
300
10
1000
ID max (pulsed) *
100 µs *
(mJ)
100 ID max (continuous)
Avalanche energy EAS
1 ms *
Drain current
ID
(A)
30
10
DC operation
Tc = 25°C
3
800
600
400
200
1
*: Single nonrepetitive pulse
Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature
0.1
0.1
1
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
VDSS max
10
Drain-source voltage VDS
100
(V)
15 V
BVDSS
IAR
0V
VDD
Test circuit
RG = 25 Ω
VDD = 24 V, L = 100 µH
5
VDS
Waveform
Ε AS =


1
B VDSS

⋅ L ⋅ I2 ⋅ 
B

−
2
V
VDSS
DD


2001-12-11
2SK3439
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
6
2001-12-11