Darlington Phototransistors PNA2803M Darlington Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes 15.0±1.0 4.5±0.3 ø 3 plastic package 2-0.8 max. 1.0 2-0.5±0.1 2 Absolute Maximum Ratings (Ta = 25˚C) Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V Collector current IC 30 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +100 ˚C 1.7 Symbol (1.5) Parameter 0.5±0.1 1 2.54 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L) *3 Conditions VCE = 10V, L = 2 λP VCE = 10V θ tr, tf*2 VCE(sat) min typ VCE = 10V lx*1 0.05 max Unit 0.5 µA 1.5 mA 850 nm Measured from the optical axis to the half power point 30 deg. VCC = 10V, ICE(L) = 1mA, RL = 100Ω 150 µs ICE(L) = 1mA, L = 100 lx*1 0.7 1.5 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit VCC Sig.IN (Input pulse) Sig.OUT *3 I CE(L) (Output pulse) RL td tr ,, ,, 50Ω 90% 10% tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class Q R S ICE(L) (mA) 0.05 to 0.25 0.18 to 0.8 0.7 to 1.5 1 PNA2083M Darlington Phototransistors PC — Ta ICE(L) — VCE 60 40 20 0 20 40 Ambient temperature 60 80 20 16 PC = 100mW L = 20 lx 12 10 lx 8 5 lx 4 0 100 Ta (˚C ) 0 4 8 12 16 20 Collector to emitter voltage 10 2 1 10-1 10-1 24 Dark current 1 L (lx) Spectral sensitivity characteristics 100 VCE = 10V 80 S (%) 10 1 10 –1 VCE = 10V Ta = 25˚C 60 40 20 Ambient temperature 80 10 –2 – 20 120 Ta (˚C ) 0 10˚ 40 30 20 ,, , 50 Sig. OUT RL 40˚ 50˚ 60˚ 70˚ tr (µs) 60 80 0 600 100 700 800 td 90% 10% tf RL = 1kΩ 10 3 1000 1100 1200 tf — ICE(L) Sig.IN tr 900 Wavelength λ (nm) Ta (˚C ) VCC Sig. OUT 50Ω 30˚ Rise time 70 Sig.IN Relative sensitivity S (%) 80 60 tr — ICE(L) 20˚ 100 90 40 Ambient temperature Directivity characteristics 0˚ 20 VCC Sig. OUT 50Ω Sig. OUT RL , 40 tf (µs) 0 Fall time 10 –1 – 40 500Ω tr 10 3 td 90% 10% tf RL = 1kΩ 500Ω 100Ω 10 2 10 2 100Ω 80˚ 90˚ 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 2 102 10 Illuminance Relative sensitivity ICEO (µA) ICE(L) (mA) VCE = 10V 1 VCE (V) ICEO — Ta 10 2 VCE = 10V Ta = 25˚C T = 2856K 10 2 lx 1 lx ICE(L) — Ta 10 ICE(L) (mA) 80 Ta = 25˚C T = 2856K Collector photo current ICE(L) (mA) 100 0 – 20 Collector photo current ICE(L) — L 10 3 24 Collector photo current Collector power dissipation PC (mW) 120 1 10 ICE(L) (mA) 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 1 10 ICE(L) (mA)