Darlington Phototransistors PNA2803M (PN268-(NC)) Darlington Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes 15.0±1.0 4.5±0.3 ø 3 plastic package 2-0.8 max. 1.0 2-0.5±0.1 2 Absolute Maximum Ratings (Ta = 25˚C) Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V Collector current IC 30 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +100 ˚C 1.7 Symbol (1.5) Parameter 0.5±0.1 1 2.54 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L) *3 Conditions VCE = 10V, L = 2 λP VCE = 10V θ tr, tf*2 VCE(sat) min typ VCE = 10V lx*1 0.05 max Unit 0.5 µA 1.5 mA 850 nm Measured from the optical axis to the half power point 30 deg. VCC = 10V, ICE(L) = 1mA, RL = 100Ω 150 µs ICE(L) = 1mA, L = 100 lx*1 0.7 1.5 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit VCC Sig.IN (Input pulse) Sig.OUT *3 I CE(L) (Output pulse) RL td tr ;; ;; 50Ω 90% 10% tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class Q R S ICE(L) (mA) 0.05 to 0.25 0.18 to 0.8 0.7 to 1.5 Note) The part number in the parenthesis shows conventional part number. 1 PNA2803M Darlington Phototransistors PC — Ta ICE(L) — VCE 60 40 20 0 20 40 Ambient temperature 60 80 20 16 PC = 100mW L = 20 lx 12 10 lx 8 5 lx 4 0 100 Ta (˚C ) 0 4 8 12 16 20 Collector to emitter voltage 10 2 1 10-1 10-1 24 Dark current 1 L (lx) Spectral sensitivity characteristics 100 VCE = 10V 80 S (%) 10 1 10 –1 VCE = 10V Ta = 25˚C 60 40 20 Ambient temperature 80 10 –2 – 20 120 Ta (˚C ) 0 10˚ 40 30 20 ;; ; 50 Sig. OUT RL 40˚ 50˚ 60˚ 70˚ tr (µs) 60 80 0 600 100 700 800 td 90% 10% tf RL = 1kΩ 10 3 1000 1100 1200 tf — ICE(L) Sig.IN tr 900 Wavelength λ (nm) Ta (˚C ) VCC Sig. OUT 50Ω 30˚ Rise time 70 Sig.IN Relative sensitivity S (%) 80 60 tr — ICE(L) 20˚ 100 90 40 Ambient temperature Directivity characteristics 0˚ 20 VCC Sig. OUT 50Ω Sig. OUT RL ; 40 tf (µs) 0 Fall time 10 –1 – 40 500Ω tr 10 3 td 90% 10% tf RL = 1kΩ 500Ω 100Ω 10 2 10 2 100Ω 80˚ 90˚ 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 2 102 10 Illuminance Relative sensitivity ICEO (µA) ICE(L) (mA) VCE = 10V 1 VCE (V) ICEO — Ta 10 2 VCE = 10V Ta = 25˚C T = 2856K 10 2 lx 1 lx ICE(L) — Ta 10 ICE(L) (mA) 80 Ta = 25˚C T = 2856K Collector photo current ICE(L) (mA) 100 0 – 20 Collector photo current ICE(L) — L 10 3 24 Collector photo current Collector power dissipation PC (mW) 120 1 10 ICE(L) (mA) 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 1 10 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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