SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability • SIEGET 25 - Line 1 VPS05605 Siemens Grounded Emitter Transistor 25 GHz f T - Line ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 405 ALs 1=B Q62702-F1592 2=E Package 3=C 4=E SOT-343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 12 Base current IB 1 Total power dissipation, T S ≤ 120 °C Ptot 55 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 Storage temperature T stg -65 ...+150 RthJS ≤ 530 Value Unit V mA Thermal Resistance Junction - soldering point 1) K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 405 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4.5 5 6.5 V I CBO - - 150 nA I EBO - - 15 µA hFE 50 90 150 - fT 20 25 - Ccb - 0.05 0.08 Cce - 0.28 - Ceb - 0.29 - F - 1.15 1.4 Gms - 22 - 14 17 - dB IP3 - 15 - dBm P-1dB - 5 - DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 5 mA, V CE = 4 V V(BR)CEO AC characteristics Transition frequency IC = 10 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 900 MHz Power gain 1) IC = 5 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intersept point IC = 5 mA, VCE = 2 V, ZS=ZSopt , ZL =ZLopt , f = 1.8 GHz 1dB Compression point IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt |S21|2 GHz pF dB 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BFP 405 Common Emitter S-Parameters f GHz S11 MAG ANG S21 S12 S22 MAG ANG MAG ANG MAG ANG 13.52 12.76 11.25 8.04 5.91 4.63 3.13 2.22 1.93 1.65 1.47 1.23 174.9 154.6 133.3 100.3 77.4 58.9 28 -1.5 -15.5 -27.5 -38.2 -49.5 0.0033 0.0161 0.0290 0.0479 0.0639 0.799 0.1104 0.118 0.129 0.136 0.145 0.155 88.9 77.5 67.9 55.4 49.2 43.2 30.2 13.6 5.1 -2.2 -8.5 -15.3 0.986 0.956 0.873 0.709 0.594 0.509 0.386 0.251 0.153 0.069 0.127 0.187 -2.5 -12.6 -22.7 -36.8 -44.7 -55.5 -73.5 -92.2 106.6 -166.6 137.2 75.6 RN rn F50Ω 2) |S21|2 2) VCE = 2V, IC = 5mA 0.1 0.5 1 2 3 4 6 8 9 10 11 12 0.841 0.791 0.682 0.449 0.304 0.239 0.303 0.464 0.549 0.631 0.666 0.693 -5.2 -25.4 -48.7 -88.6 -126.1 -171.1 129.3 91.4 77.9 71 67.6 63.4 Common Emitter Noise Parameters f Fmin 1) Ga 1) Γopt GHz dB dB MAG ANG Ω - dB dB 0.54 0.46 0.41 0.34 0.26 0.17 0.13 14 27 38 55 80 117 180 21 19 18 17 12.5 11 14 0.42 0.38 0.36 0.34 0.25 0.22 0.28 1.8 1.8 1.8 1.8 1.8 1.9 2.2 16.1 15 14 12.9 11.3 9.7 8.2 V CE = 2V, IC = 2mA 0.9 1.8 2.4 3.0 4 5 6 0.9 1.15 1.35 1.46 1.62 1.75 2.15 21.2 18.2 15.5 14.5 11.9 9.3 8.1 1) Input matched for minimum noise figure, output for maximum gain 2) Z S = ZL = 50Ω For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 BFP 405 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.21024 fA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 Ω IRB = 0.21215 mA RBM = 1.3491 Ω RE = 1.9289 RC = 0.12691 Ω CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 - TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 Ω L BI = 0.47 nH L BO = 0.53 nH L EI = 0.23 nH L EO = 0.05 nH L CI = 0.56 nH L CO = 0.58 nH C BE = 136 fF C CB = 6.9 fF C CE = 134 fF C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: C CB L BO L BI B B’ Transistor Chip E’ C BE C’ L CI L CO C C’-E’Diode C CE L EI L EO E EHA07389 Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44 Sep-09-1998 1998-11-01 BFP 405 For non-linear simulation: • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. • If you need simulation of thereverse characteristics, add the diode with the C’-E’- diode data between collector and emitter. • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: • Higher gain because of lower emitter inductance. • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group Semiconductor Group 55 Sep-09-1998 1998-11-01 BFP 405 Total power dissipation P tot = f (T A*, TS) Transition frequency fT = f (IC) * Package mounted on epoxy f = 2 GHz VCE = parameter in V 100 30 GHz mW 1.5 to 4 80 1 22 0.75 20 fT P tot 70 24 60 18 16 50 TS 14 40 12 0.5 10 30 TA 8 20 6 4 10 2 0 0 20 40 60 80 100 120 °C 0 0 150 2 4 6 8 mA 10 TA,TS 14 IC Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax/P totDC = f (tp) 10 1 RthJS Pmax / PDC 10 3 K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp Semiconductor Group Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 66 Sep-09-1998 1998-11-01 BFP 405 Power gain G ma, G ms, |S 21|2 = f (f) VCE = 2V, I C = 5mA Power gain Gma, Gms = f (I C) VCE = 2V f = parameter in GHz 40 32 dB 0.9 dB 32 1.8 24 2.4 28 G G Gms 24 20 16 20 3 4 16 5 G ma |S21 |2 6 12 12 8 8 4 4 0 0.0 1.0 2.0 3.0 4.0 GHz 0 0 6.0 2 4 6 8 10 f mA 14 IC Power gain G ma, G ms = f (V CE) I C = 5mA Collector-base capacitance Ccb = f (VCB) VBE = 0, f = 1MHz f = parameter in V 0.35 30 GHz 0.9 pF 1.8 22 2.4 3 G 20 18 0.25 Ccb 24 4 0.20 16 5 14 0.15 6 12 10 0.10 8 6 0.05 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V 0.00 0.0 4.5 VCE Semiconductor Group Semiconductor Group 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VCB 77 Sep-09-1998 1998-11-01 BFP 405 Noise figure F = f (IC) Noise figure F = f (IC) VCE = 2 V, ZS = Z Sopt VCE = 2 V, f = 1.8 GHz 4.0 4.0 dB 3.0 3.0 2.5 2.5 F F dB 2.0 2.0 1.5 1.5 f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz 1.0 0.5 0.0 0 2 4 6 8 mA ZS = 50 Ohm ZS = ZSopt 1.0 0.5 0.0 0 12 2 4 6 mA 8 IC 12 IC Noise figure F = f ( f ) Source impedance for min. VCE = 2 V, ZS = Z Sopt Noise Figure versus Frequency VCE = 2V, I C = 2mA / 5 mA 3.0 +j50 dB +j25 +j100 +j10 2.0 4GHz 3GHz 1.8GHz F 5GHz 0.9GHz 6GHz 0 1.5 IC = 5 mA IC = 2 mA 1.0 10 25 50 2mA 5mA -j10 0.5 100 -j100 -j25 -j50 0.0 0.0 1.0 2.0 3.0 4.0 GHz 6.0 f Semiconductor Group Semiconductor Group 88 Sep-09-1998 1998-11-01