BUP 314 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 2 Pin 1 G Type VCE IC BUP 314 1200V 52A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4206-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 52 TC = 90 °C 33 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 104 TC = 90 °C 66 EAS Avalanche energy, single pulse mJ IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C 65 Ptot Power dissipation TC = 25 °C W 300 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C Jul-30-1996 BUP 314 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance ≤ 0.42 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.35 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 25 A, Tj = 25 °C - 2.7 3.2 VGE = 15 V, IC = 25 A, Tj = 125 °C - 3.3 3.9 VGE = 15 V, IC = 42 A, Tj = 25 °C - 3.4 - VGE = 15 V, IC = 42 A, Tj = 125 °C - 4.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current mA - - 0.25 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 25 A Input capacitance 8.5 pF - 1650 2200 - 250 380 - 110 160 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 20 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-30-1996 BUP 314 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω Rise time - 75 110 - 65 100 - 420 560 - 45 60 tr VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω Semiconductor Group 3 Jul-30-1996 BUP 314 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 320 55 A W Ptot IC 240 45 40 35 200 30 160 25 120 20 15 80 10 40 5 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 IGBT 10 0 A K/W IC tp = 2.0µs 10 2 ZthJC 10 µs 10 -1 100 µs 10 1 D = 0.50 1 ms 0.20 10 -2 0.10 0.05 10 ms 10 0 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 3 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-30-1996 BUP 314 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 50 50 A IC 40 35 A 17V 15V 13V 11V 9V 7V IC 40 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 50 A IC 40 35 30 25 20 15 10 5 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jul-30-1996 BUP 314 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A 10 3 10 3 t tdoff t ns tdoff ns tdon 10 2 tr 10 2 tdon tr tf 10 1 0 10 20 30 40 A tf 10 1 0 60 20 40 60 80 100 120 140 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω E = f (RG) , inductive load , Tj = 125°C 10 mWs E mWs 8 E 7 8 7 6 6 5 5 Eon Eoff 4 4 3 3 2 2 1 1 0 0 180 par.: VCE = 600V, VGE = ± 15 V, IC = 25 A Eon 10 Ω RG IC 10 20 30 40 A 0 0 60 IC Semiconductor Group Eoff 20 40 60 80 100 120 140 Ω 180 RG 6 Jul-30-1996 BUP 314 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 25 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C Ciss 600 V 14 800 V 10 0 12 10 Coss 8 10 -1 Crss 6 4 2 0 0 20 40 60 80 100 120 140 170 10 -2 0 5 10 15 20 25 30 V 40 VCE QGate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 ICsc/IC(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 7 0 200 400 600 800 1000 1200 V 1600 VCE Jul-30-1996 BUP 314 Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Jul-30-1996