MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 114 27 M8 B2 X 25 21.5 B2 E2 2–M6 C1 18 6 5.5 E1 B1 93 4–φ6.5 17 8 17 21 (7) LABEL 34.5 8 6.5 Tab#110, t=0.5 21 1 31 1 E2 114 B1X 6 8 Tab#187, t=0.8 93 21 B1 E1 B1X 6 C1 14 7 C2E1 15 38 E2 E2 B2 6 B2X C2E1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage Parameter IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current DC –IC Collector reverse current DC (forward diode current) 300 A PC Collector dissipation TC=25°C 1980 W IB Base current DC 16 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 3000 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Conditions Charged part to case, AC for 1 minute Main terminal screw M6 — Mounting torque Main terminal screw M8 Mounting screw M6 — Typical value Weight ELECTRICAL CHARACTERISTICS Symbol 7 V 300 A 2500 V 1.96~2.94 N·m 20~30 kg·cm 8.83~10.8 N·m 90~110 kg·cm 1.96~2.94 N·m 20~30 kg·cm 1200 g (Tj=25°C, unless otherwise noted) Test conditions Parameter Limits Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V — — 4.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open — — 4.0 mA IEBO Emitter cutoff current VEB=7V — — 400 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.5 V –VCEO Collector-emitter reverse voltage –IC=300A (diode forward voltage) — — 1.8 V hFE DC current gain IC=300A, VCE=2.8V/5V 75/100 — — — — — 3.0 µs Switching time VCC=600V, IC=300A, IB1=–IB2=6A — — 15 µs — — 3.0 µs Transistor part (per 1/2 module) — — 0.063 °C/ W Diode part (per 1/2 module) — — 0.30 °C/ W Conductive grease applied (per 1/2 module) — — 0.04 °C/ W IC=300A, IB=6A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) IB=4.0A IB=2.0A DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) 500 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 400 IB=1.0A 300 IB=0.5A 200 IB=0.2A 100 Tj=25°C 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 10 2 7 5 3 2 VCE=2.8V Tj=25°C 10 1 7 5 3 2 10 0 7 5 3 2 10 –1 1.8 2.2 2.6 3.0 BASE-EMITTER VOLTAGE 3.4 3.8 VBE (V) 2 IC=300A 1 Tj=25°C Tj=125°C 0 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 BASE CURRENT IB (A) ton, ts, tf (µs) 3 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=400A SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 VBE(sat) VCE(sat) IB=6A Tj=25°C Tj=125°C 10 –1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 5 IC=200A 10 2 7 5 3 Tj=25°C 2 Tj=125°C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=2.8V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) VCE=5.0V 10 3 7 5 3 2 VCE (V) SATURATION VOLTAGE 0 10 4 7 5 3 2 10 2 7 VCC=600V 5 IB1=–IB2=6A 3 Tj=25°C 2 Tj=125°C ts 10 1 7 5 3 tf 2 10 0 7 5 ton 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE BIAS SAFE OPERATING AREA 10 2 7 VCC=600V 5 IB1=6A 4 IC=300A Tj=25°C 3 Tj=125°C 2 800 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts 10 1 7 5 4 3 2 tf 10 0 10 –1 2 3 4 5 7 10 0 600 IB2=–6A IB2=–12A 400 Tj=125°C 200 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT –IB2 (A) 0 µs 10 2 7 5 3 2 10 1 7 5 3 TC=25°C 2 NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0.07 0.06 Zth (j–c) (°C/ W) 80 0.05 0.04 0.03 0.02 0.01 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 1000 VCE (V) 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.08 TIME (s) 800 SECOND BREAKDOWN AREA 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR-EMITTER VOLTAGE 600 100 50µs 200 s DC 400 DERATING FACTOR OF F. B. S. O. A. DERATING FACTOR (%) 100µs 1m COLLECTOR CURRENT IC (A) FOWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 200 COLLECTOR-EMITTER VOLTAGE 10 3 7 5 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25°C Tj=125°C 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 3200 2800 Irr (A), Qrr (µc) 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 VCC=600V 5 IB1=–IB2=6A 3 Tj=25°C 2 Tj=125°C 10 2 7 5 3 2 10 2 Irr Qrr 10 1 trr (µs) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 10 1 10 0 7 5 3 2 10 –1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40 Zth (j–c) (°C/ W) 0.32 0.24 0.16 0.08 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999