ROHM RB215T

Data Sheet
Schottky barrier diode
RB215T-90
Applications
General rectification
(Common cathode dual chip)
Dimensions (Unit : mm)
Structure
4.5±0.3
0.1
2.8±0.2
0.1
10.0±0.3
0.1
5.0±0.2
13.5MIN
1.2
1.3
Construction
Silicon epitaxial planar
15.0±0.4
0.2
8.0±0.2
12.0±0.2
①
3) High reliability
8.0
(1) (2) (3)
Features
1) Small power mold type.(PMDU)
2) Low IR
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Reverse voltage (repetitive)
90
VRM
Reverse voltage (DC)
90
VR
Average rectified forward current(*1)
20
Io
Forward current surge peak (60Hz/1cyc) (*1)
100
IFSM
Junction temperature
150
Tj
Storage temperature
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110C
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
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Unit
V
V
A
A
C
C
Symbol
VF
IR
Min.
Typ.
Max.
Unit
-
-
0.75
400
V
μA
jc
-
-
1.75
C/W
Conditions
IF=10A
VR=90V
junction to case
2011.04 - Rev.D
1/3
Data Sheet
RB215T-90
Electrical characteristics curves
Ta=125C
1
Ta=75C
Ta=150C
100000
Ta=125C
Ta=-25C
0.1
Ta=25C
10000
10000
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=150C
10
1000000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
100
Ta=75C
1000
Ta=25C
100
10
Ta=-25C
1000
100
10
1
0.01
0
1
0.1
100 200 300 400 500 600 700 800 900 100
0
0
10
20
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
40
50
60
70
80
0
90
AVE:692.7mV
680
20
1290
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
690
15
25
30
1300
Ta=25C
VR=90V
n=30pcs
250
REVERSE CURRENT:IR(uA)
700
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
Ta=25C
IF=10A
n=30pcs
710
5
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
720
FORWARD VOLTAGE:VF(mV)
30
200
150
100
AVE:46.0uA
50
Ta=25C
f=1MHz
VR=0V
n=10pcs
1280
1270
1260
1250
1240
AVE:1257.3pF
1230
1220
1210
1200
0
670
VF DISPERSION MAP
IR DISPERSION MAP
1000
30
1cyc
Ifsm
200
8.3ms
150
AVE:168.0A
100
50
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
AVE:21.6ns
PEAK SURGE
FORWARD CURRENT:I FSM(A)
250
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
300
Ct DISPERSION MAP
15
10
5
0
100
10
Ifsm
8.3ms
8.3ms
1cyc
1
0
1
IFSM DISPERSION MAP
1000
t
100
10
10
TIME:t(s)
IFSM-t CHARACTERISTICS
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100
50
IF=10A
IM=100mA
DC
40
1ms
10
time
Rth(j-a)
300us
Rth(j-c)
1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
trr DISPERSION MAP
D=1/2
30
Sin(=180)
20
10
0.1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
10
20
30
40
50
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.D
60
20
DC
D=1/2
10
Sin(=180)
60
Io
0A
50
0V
40
D=1/2
DC
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
30
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB215T-90
VR
t
T
D=t/T
VR=45V
Tj=150C
30
20
10
Sin(=180)
0
0
0
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
50
DC
40
0A
Io
0V
VR
t
D=1/2
T
D=t/T
VR=45V
Tj=150C
30
20
Sin(=180)
10
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
No Break at 30kV
25
20
15
10
5
0
AVE:11.6kV
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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3/3
2011.04 - Rev.D
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Notes
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R1120A