ROHM RHP020N06T100

4V Drive Nch MOSFET
RHP020N06
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
MPT3
1.5
2.5
4.0
zFeatures
1) Low On-resistance.
2) High speed switching.
3) Wide SOA.
0.5
4.5
1.6
(2)
(3)
1.0
(1)
0.5
0.4
1.5
0.4
0.4
1.5
3.0
(1)Gate
(2)Drain
zApplications
Switching
(3)Source
zPackaging specifications and hFE
Package
Type
Abbreviated symbol : LR
zInner circuit
Taping
Code
T100
Basic ordering unit (pieces)
1000
DRAIN
RHP020N06
∗2
GATE
∗1
SOURCE
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Pulsed
Continuous
Pulsed
Drain current
Source current
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD
Total power dissipation
Tch
Tstg
Channel temperature
Range of storage temperature
Limits
60
±20
±2
±8
2
8
500
2
150
−55 to +150
Unit
V
V
A
A
A
A
mW
W
°C
°C
Limits
250
62.5
Unit
°C/W
°C/W
∗2
+
+
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
∗
+
+
∗ When mounted on a 40 40 0.7mm ceramic board
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2009.03 - Rev.A
Data Sheet
RHP020N06
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Parameter
−
60
−
1.0
−
−
−
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
150
200
240
−
140
50
40
7
10
22
18
7
1
2
±10
−
1
2.5
200
280
340
−
−
−
−
−
−
−
−
14
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 60V, VGS=0V
VDS= 10V, ID= 1mA
ID= 2A, VGS= 10V
ID= 2A, VGS= 4.5V
ID= 2A, VGS= 4V
VDS= 10V, ID= 2A
VDS= 10V
VGS=0V
f=1MHz
VDD 30V
ID= 1A
VGS= 10V
RL=30Ω
RG=10Ω
VDD 30V
VGS= 10V
ID= 2A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
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○
Typ.
−
Max.
1.2
Unit
V
Conditions
IS= 2A, VGS=0V
2/4
2009.03 - Rev.A
Data Sheet
RHP020N06
zElectrical characteristics curves
VGS= 10V
VGS= 5.0V
VGS= 4.5V
VGS= 3.5V VGS= 4.0V
VGS= 2.8V
VGS= 2.4V
6
4
2
VDS= 10V
Pulsed
VGS= 10V Ta=25°C
VGS= 5.0V Pulsed
8
DRAIN CURRENT : ID[A]
8
10
10
Ta=25°C
Pulsed
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
10
VGS= 4.5V
6
VGS= 4.0V
4
VGS= 3.0V
2
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
VGS= 2.4V
0
0.2
0.4
0.6
0.8
1
0
2
6
8
0
10
1
2
3
4
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25°C
Pulsed
VGS= 4.0V
VGS= 4.5V
VGS= 10V
1
0.1
0.1
1
10
VGS= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.1
0.01
0.01
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
10
0.01
0.01
DRAIN-CURRENT : ID[A]
1
10
0.01
0.01
0.1
1
0
10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
REVERSE DRAIN CURRENT : Is [A]
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.01
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
VGS= 4.5V
Pulsed
0
0.1
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
VGS= 4.0V
Pulsed
10
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
4
Fig.1 Typical Output Characteristics(Ⅰ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
0.001
0
0
VDS= 10V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/4
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2009.03 - Rev.A
Data Sheet
1000
Ta=25°C
Pulsed
0.5
0.4
ID= 2.0A
0.3
0.2
0.1
9
td(off)
10
ID= 1.0A
td(on)
tr
1
0
5
10
15
0.01
0.1
GATE-SOURCE VOLTAGE : VGS[V]
100
DRAIN CURRENT : ID (A)
Ciss
Crss
Ta=25°C
f=1MHz
VGS=0V
10
Coss
8
7
6
5
4
Ta=25°C
VDD= 30V
ID= 2.0A
RG=10Ω
Pulsed
3
2
1
0
0
1
2
3
4
5
6
TOTAL GATE CHARGE : Qg [nC]
Fig.11 Switching Characteristics
1000
100
1
DRAIN-CURRENT : ID[A]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
CAPACITANCE : C [pF]
tf
100
0
Fig.12 Dynamic Input Characteristics
Operation in this area is limited by RDS(ON)
(VGS= 10V)
100us
10
1ms
1
PW = 10ms
DC operation
0.1
0.01
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
0.001
10
0.01
0.1
1
10
0.1
100
DRAIN-SOURCE VOLTAGE : VDS[V]
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
Ta=25°C
VDD= 30V
VGS=10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS [V]
0.6
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[Ω]
RHP020N06
Fig.14 Maximum Safe Operating Aera
10
1
0.1
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a SERAMIC board>
0.01
0.001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
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4/4
2009.03 - Rev.A
Appendix
Notes
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upon request.
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Appendix-Rev4.1