SSD20N03 N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES z z z z Dynamic dv/dt Rating Repetitive Avalanche Rated Simple Drive Requirement Fast Switching PACKAGE DIMENSIONS REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 Ref. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID @TC=25℃ 20 A Continuous Drain Current ID @TC=100℃ 13 A IDM 53 A PD @Ta=25℃ 31 W 0.25 W/℃ -55 ~ +150 ℃ 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg THERMAL DATA Parameter Symbol Value Unit Thermal Resistance Junction-case Max. Rθj-case 4.0 ℃ /W Thermal Resistance Junction-ambient Max. Rθj-amb 110 ℃ /W 01-June-2005 Rev. A Page 1 of 5 SSD20N03 N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature ΔBVDSS /ΔTj - 0.037 - VGS(th) 1.0 - 3.0 V VDS=VGS, ID= 250uA gfs - 3 - S VDS= 10V, ID= 10A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS= 30V, VGS=0 - - 100 uA VDS= 24V, VGS= 0 - - 52 - - 85 Qg - 6.1 - Gate-Source Charge Qgs - 1.4 - Gate-Drain (“Miller”) Change Qgd - 4 - Td(on) - 4.9 - Tr - 29 - Td(off) - 14.3 - Tf - 3.6 - Input Capacitance Ciss - 290 - Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 45 - Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=150℃) Static Drain-Source On-Resistance Total Gate Charge 2 Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS RDS(ON) Test Conditions VGS=0, ID= 250uA V /°C Reference to 25°C, ID= 1mA mΩ VGS= 10V, ID= 10A VGS= 4.5V, ID= 8A nC ID= 10 A VDS= 24 V VGS= 5 V ns VDS=15 V ID= 20 A VGS= 10 V RG= 3.3 Ω RD= 0.75 Ω pF VGS=0 V VDS=25 V f=1.0 MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)1 Symbol Min. Typ. Max. Unit Test Conditions VSD - - 1.3 V IS=20 A, VGS=0 V, TJ = 25°C IS - - 20 A VD = VG = 0V, VS = 1.3 V ISM - - 53 A Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. 01-June-2005 Rev. A Page 2 of 5 SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 3 of 5 SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ CHARACTERISTIC CURVES (cont’d) 01-June-2005 Rev. A Page 4 of 5 SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ CHARACTERISTIC CURVES (cont’d) 01-June-2005 Rev. A Page 5 of 5