SSG4403 P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. FEATURES z z z Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS SOP-8 0.19 0.25 0.40 0.90 45 o 0.375 REF 6.20 5.80 0.25 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 o 0 o 8 1.35 1.75 Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Symbol Ratings Unit VDS -30 V VGS ±12 V 3 ID @Ta=25℃ -6.1 A 3 ID @Ta=70℃ -5.1 A IDM -60 A PD @Ta=25℃ 2.5 W Tj, Tstg -55 ~ +150 ℃ 0.02 W/℃ Symbol Value Unit Rθj-amb 50 ℃/W Continuous Drain Current Continuous Drain Current 1 Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient 01-June-2005 Rev. A 3 Max. Page 1 of 4 SSG4403 P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ Elektronische Bauelemente P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -0.7 - -1.3 V VDS=VGS, ID=-250uA gfs - 11 - S VDS=-5V, ID=-5A IGSS - - ±100 nA VGS= ±12V - - -1 uA VDS=-30V, VGS=0 - - -5 uA VDS=-24V, VGS=0 - - 50 - - 61 - - 117 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=55℃) Static Drain-Source On-Resistance2 IDSS RDS(ON) VGS=-10V, ID=-6.1A mΩ Qg - 9.4 - Gate-Source Charge Qgs - 2 - Gate-Drain (“Miller”) Change Qgd - 3 - Td(on) - 7.6 - Tr - 8.6 - Td(off) - 44.7 - Tf - 16.5 - Input Capacitance Ciss - 940 - Output Capacitance Coss - 104 - Reverse Transfer Capacitance Crss - 73 - Symbol Min. Typ. Max. Unit VSD - - -1.0 V Continuous Source Current (Body Diode) IS - - -4.2 A Reverse Recovery Time2 Trr - 22.7 - ns Reverse Recovery Charge Qrr - 15.9 - nC Rise Time Turn-off Delay Time Fall Time VGS=-4.5V, ID=-5A VGS=-2.5 V, ID=-1 A Total Gate Charge2 Turn-on Delay Time2 Test Conditions nC ID=-5 A VDS=-15 V VGS=-4.5 V ns VDS=-15 V ID=-10 V RG=6 Ω RL=2.4 Ω pF VGS=0 V VDS=-15 V f=1.0 MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Notes: Test Conditions IS=-1A, VGS=0 V IS = -5A, VGS = 0V, Tj=25°C dl/dt = 100A/us 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 2 3. Mounted on 1 in copper pad of FR4 board; 125 °C/W when mounted on Min. copper pad. 01-June-2005 Rev. A Page 2 of 4 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ CHARACTERISTIC CURVE 01-June-2005 Rev. A Page 3 of 4 SSG4403 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -6.1 A, -30 V, RDS(ON) 50 mΩ CHARACTERISTIC CURVE (cont’d) 01-June-2005 Rev. A Page 4 of 4