SSD9973
14A, 60V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
Description
TO-252
The SSD9973 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Features
* Low Gate Charge
* Simple Drive Requirement
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
60
V
± 20
V
Continuous Drain Current,VGS@10V
ID@TC=25 C
14
A
Continuous Drain Current,VGS@10V
o
ID@TC=100C
9
A
IDM
40
A
27
W
0.22
W/ C
-55~+150
o
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
C
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
4.5
o
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
o
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSD9973
14A, 60V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Vol tage
Breakdown Voltage Temp. Co efficient
Gate Threshold Voltage
Gate-Source Leakage Curren t
Symbol
Min.
Typ.
BVDSS
60
_
BVDS/ Tj
_
0.05
VGS(th)
1.0
_
3.0
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
1
uA
VDS=60V,VGS=0
_
_
25
uA
VDS=48V,VGS=0
_
_
o
Drain-Source Leakage Curren t (Tj=25 C )
o
Drain-Source Leakage Curren t(Tj=150C)
Static Drain-Source On-Resist ance
IDSS
RD S (O N )
_
Gate-Drain ("Miller") Charge
Qgd
Input Capacitance
80
_
Tr
_
Td(Off)
_
Tf
_
_
3
_
Td(ON)
Ciss
o
13
Qgs
Fall Time
V/ C
8
Gate-Source Charge
Turn-off Delay Time
_
100
_
Rise Time
V
_
Qg
_
4
_
7
_
15
_
16
_
3
_
720
nC
ID=9 A
VDS=48V
VGS= 4.5V
VDD=30V
ID=9A
nS
VGS=10V
RG=3.3Ω
S
VDS=10V, ID=9A
Max.
Unit
Gfs
_
8.6
Symbol
Min.
Typ.
Forward Transconductance
VGS=10V, ID=9A
_
45
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
pF
_
Crss
o
Reference to 25 C, ID=1mA
VGS=0V
VDS=25V
_
Coss
VGS=0V, ID=250uA
VGS=4.5V, ID=6 A
1150
77
Output Capacitance
mΩ
Test Condition
RD=3.3Ω
_
_
Unit
_
_
Total Gate Charge2
Turn-on Delay Time2
Max.
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
28
_
Reverse Recovery Change
Qrr
27
_
_
1.2
Test Condition
V
IS=14 A, VGS=0V.
nS
IS=9 A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSD9973
Elektronische Bauelemente
14A, 60V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSD9973
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
14A, 60V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4