AON6712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON6712 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AON6712 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 4.5V) D Top View Fits SOIC8 footprint ! DFN5X6 S D S D S D G D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain B,J Current TC=25°C Power Dissipation TC=100°C B Power Dissipation A Maximum 30 Units V ±12 V ID IDM 30 IDSM IAR 13 A 80 16 C TC=25°C EAR TA=25°C Junction and Storage Temperature Range 264 mJ W W 1.6 °C -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. A 2.5 TJ, TSTG t ≤ 10s Steady-State Steady-State 42 25 PDSM TA=70°C A 62.5 PD TC=100°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case C S 30 Pulsed Drain Current Continuous Drain TA=25°C H Current TA=70°C C Avalanche Current Repetitive avalanche energy L=0.3mH SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode RθJA RθJC Typ 14.2 42 1.2 Max 20 50 2.0 Units °C/W °C/W °C/W www.aosmd.com AON6712 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, V GS=0V VDS=30V, V GS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=10V, V DS=5V 80 1.7 2.3 V 4.3 5.5 6.8 9.0 VGS=4.5V, ID=20A 5.2 6.5 VDS=5V, ID=20A 100 gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge mA µA Static Drain-Source On-Resistance Crss 10 0.1 RDS(ON) Output Capacitance Units V TJ=125°C VGS=10V, ID=20A Coss Max 0.1 IDSS IS Typ A 0.35 3940 mΩ mΩ S 0.5 V 5 A 5120 pF VGS=0V, VDS=15V, f=1MHz 590 VGS=0V, VDS=0V, f=1MHz 0.72 1.1 Ω 72.8 95 nC pF 255 VGS=10V, V DS=15V, ID=20A pF nC 35.0 10.4 nC Qgd Gate Drain Charge 12.4 nC tD(on) Turn-On DelayTime 9.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 32 VGS=10V, V DS=15V, R L=0.83Ω, RGEN=3Ω 8.4 ns 45 ns 10 ns 43 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsink is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. J. Maximum current is limited by bonding wire. Rev0: Feb 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 60 VDS=5V 25 Vgs=10V1 Vgs=3V 40 ID(A) ID (A) 20 125°C 15 10 20 25°C VGS=2.5V 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 Normalized On-Resistance 1.8 7 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 8 VGS=4.5V 5 VGS=10V 4 ID=20A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 14 1.0E+02 ID=20A 12 10 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 2 8 6 25°C 1.0E-01 1.0E-02 1.0E-03 4 25°C 1.0E-04 2 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON6712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=18A 5000 Ciss Capacitance (pF) 8 VGS (Volts) 4000 6 3000 4 2000 2 Crss 1000 0 0 0 20 40 60 80 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 200 100.0 10.0 10s 10ms 100µs DC 1ms 1.0 0.1 160 10µs RDS(ON) limited TJ(Max)=150°C TC=25°C Power (W) ID (Amps) Coss TJ(Max)=150°C TA=25°C 120 80 40 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 75 120 L ⋅ ID BV − VDD tA = 100 Power Dissipation (W) ID(A), Peak Avalanche Current 140 80 60 40 20 TA=25°C 0 60 45 30 15 0 0.00001 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 50 75 40 125 150 50 TJ(Max)=150°C TA=25°C 35 40 30 25 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note B) 20 15 10 30 20 10 5 0 0 0 25 50 75 100 125 0.001 150 ZθJA Normalized Transient Thermal Resistance 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com