APT97N65B2C6
APT97N65LC6
650V
97A
0.041Ω
APT97N65B2C6
COOLMOS
Super Junction MOSFET
Power Semiconductors
T-Max®
TO-264
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
APT97N65LC6
• Extreme dv/dt Rated
D
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
S
Parameter
APT97N65B2_LC6
UNIT
650
Volts
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
1
97
(assuming Rdson max = 0.041Ω)
Amps
62
Continuous Drain Current @ TC = 100°C
2
291
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Volts
PD
Total Power Dissipation @ TC = 25°C
862
Watts
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
-55 - to 150
°C
260
2
13.4
3
Amps
2.96
( Id = 13.4A, Vdd = 50V )
1954
( Id = 13.4A, Vdd = 50V )
mJ
STATIC ELECTRICAL CHARACTERISTICS
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
MIN
4
TYP
MAX
650
Volts
0.037
(VGS = 10V, ID = 48.5A)
UNIT
0.041
Ohms
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C)
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
3.5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.96mA)
2.5
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
μA
2-2011
Characteristic / Test Conditions
050-7212 Rev A
Symbol
APT97N65B2_LC6
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Test Conditions
Input Capacitance
Coss
Reverse Transfer Capacitance
Qg
Total Gate Charge 5
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
pF
550
300
50
nC
160
25
60
ns
275
130
2860
INDUCTIVE SWITCHING @ 25°C
VDD = 433V, VGS = 15V
ID = 97A, RG = 2.2Ω
6
UNIT
7650
INDUCTIVE SWITCHING
VGS = 15V
VDD = 433V
ID = 97A @ 25°C
RG = 2.2Ω
Turn-off Delay Time
MAX
5045
VGS = 10V
VDD = 325V
ID = 97A @ 25°C
Rise Time
td(off)
TYP
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
Crss
MIN
3500
μJ
4030
INDUCTIVE SWITCHING @ 125°C
VDD = 433V, VGS = 15V
ID =97A, RG = 2.2Ω
3695
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
IS
Continuous Source Current (Body Diode)
97
ISM
Pulsed Source Current
291
VSD
Diode Forward Voltage
(Body Diode)
2
(VGS = 0V, IS = -48.5A)
4
0.9
UNIT
Amps
1.2
Volts
50
V/ns
/dt
Peak Diode Recovery /dt
t rr
Reverse Recovery Time
(IS = -97A, di/dt = 100A/μs)
Tj = 25°C
790
ns
Q rr
Reverse Recovery Charge
(IS = -97A, di/dt = 100A/μs)
Tj = 25°C
19
μC
IRRM
Peak Recovery Current
(IS = -97A, di/dt = 100A/μs)
Tj = 25°C
43
Amps
dv
dv
7
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.145
°C/W
40
1 Continuous current limited by package lead temperature.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
2 Repetitive Rating: Pulse width limited by maximum junction temperature
5 See MIL-STD-750 Method 3471
3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
7 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.14
0.12
0.7
0.10
0.5
0.08
Note:
0.06
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-7212 Rev A
2-2011
0.16
0.3
t1
0.04
t2
0.02
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
SINGLE PULSE
0.05
0
10
-5
10
-4
10
-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
APT97N65B2_LC6
Typical Performance Curves
225
15V
200
140
120
7V
ID, DRAIN CURRENT (A)
150
6.5V
125
6V
100
75
5.5V
50
5V
25
100
80
60
40
TJ= 125°C
0
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
2.00
NORMALIZED TO
V
GS
VGS = 20V
8
80
60
40
20
0.40
0
1.15
1.10
1.05
1.00
0.95
0.90
-50
0
50
100
25
50
75
100
125
150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.00
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
1.20
100
150
200
250
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
0
50
2.50
2.00
1.50
1.00
0.50
0
-50
150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
1000
1.20
Rds On
ID, DRAIN CURRENT (A)
1.10
1.00
0.90
0.80
100
10µs
10
-50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
1ms
10ms
100ms
1
0.10
0.70
100µs
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
2-2011
IDR, REVERSE
0.80
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
100
ID, DRAIN CURRENT (A)
VGS = 10V
1.20
0.85
0
TJ= -55°C
= 10V @ 48.5A
1.60
0
TJ= 25°C
20
4.5V
050-7212 Rev A
IC, DRAIN CURRENT (A)
175
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10V
APT97N65B2_LC6
Typical Performance Curves
14
Ciss
10,000
C, CAPACITANCE (pF)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
100,000
Coss
1000
Crss
100
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
VDS= 130V
10
VDS= 325V
8
VDS= 520V
6
4
2
0
0
100
100
200
300
400
td(off)
TJ= +150°C
td(on) and td(off) (ns)
IDR, REVERSE DRAIN CURRENT (A)
D
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
400
200
TJ = =25°C
10
300
V
DD
R
200
G
= 430V
= 2.2Ω
T = 125°C
J
L = 100μH
100
td(on)
1
0
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
0.3
0
40
80
120
160
ID (A)
FIGURE 13, Delay Times vs Current
200
9000
250
V
DD
R
G
= 430V
V
tf
= 2.2Ω
8000
SWITCHING ENERGY (μJ)
T = 125°C
J
L = 100μH
200
tr, and tf (ns)
I = 97A
12
150
tr
100
50
DD
R
G
= 430V
= 2.2Ω
T = 125°C
Eon
J
7000
L = 100μH
EON includes
6000
Eoff
diode reverse recovery.
5000
4000
3000
2000
1000
0
0
40
80
120
160
200
ID (A)
FIGURE 14 , Rise and Fall Times vs Current
20000
V
DD
= 430V
I = 97A
050-7212 Rev A
SWITCHING ENERGY (uJ)
2-2011
D
T = 125°C
J
L = 100μH
16000
EON includes
diode reverse recovery.
12000
Eoff
8000
Eon
4000
0
0
10
20
30
40
50
60
70
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
0
0
40
80
120
160
200
ID (A)
FIGURE 15, Switching Energy vs Current
APT97N65B2_LC6
Typical Performance Curves
Gate Voltage
10%
90%
TJ = 125°C
td(on)
TJ = 125°C
tf
90% Collector Current
tr
5%
Gate Voltage
td(off)
Collector Voltage
10%
10%
Collector Voltage
0
Collector Current
Switching Energy
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
Figure 17, Turn-on Switching Waveforms and Definitions
APT30DF60
IC
V DD
V CE
G
D.U.T.
Figure
19,20,
Inductive
Switching
Test
Circuit
Figure
Inductive
Switching
Test
Circuit
T-MAX® (B2) Package Outline
TO-264 (L) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
1.016(.040)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
2-2011
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7212 Rev A
Drain
Drain
20.80 (.819)
21.46 (.845)