APTGT200A60T3AG Hase le Phase leg Trench + Field Stop IGBT Power Module 29 30 31 32 VCES = 600V IC = 200A @ Tc = 100°C Application 13 • • • • 4 3 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features 26 27 28 22 23 25 R1 • 8 7 16 28 27 26 25 18 19 20 14 • • • • • 20 19 18 23 22 29 16 30 15 31 14 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 32 • • • 13 2 3 4 7 8 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together • • Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C TC = 100°C TC = 25°C TC = 25°C Tj = 150°C Max ratings 600 290 200 400 ±20 750 Unit V April, 2009 Parameter Collector - Emitter Breakdown Voltage A V W 400A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGT200A60T3AG – Rev 1 Symbol VCES APTGT200A60T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 150°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=300V IC=200A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A RG = 2Ω Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 200A Tj = 25°C RG = 2Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 12.3 0.8 0.4 nF 2.2 µC 115 45 225 ns 55 130 50 ns 300 70 1 1.8 5.7 7 mJ mJ 1000 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =2800A/µs www.microsemi.com Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 200 1.6 1.5 125 220 9 Tj = 150°C Tj = 25°C Tj = 150°C 20 2.2 4.8 Max 250 500 Unit V µA A 2 V April, 2009 IRM Test Conditions ns µC mJ 2–5 APTGT200A60T3AG – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200A60T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 Max 0.20 0.31 Unit °C/W V 175 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGT200A60T3AG – Rev 1 28 17 1 April, 2009 SP3 Package outline (dimensions in mm) APTGT200A60T3AG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 400 400 TJ=25°C 350 200 150 100 100 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 14 350 1 300 10 E (mJ) 250 200 TJ=125°C 2.5 3 3.5 Eoff 8 Er 6 4 100 TJ=150°C 2 50 TJ=25°C 5 6 7 8 9 Eon 0 0 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance 16 VCE = 300V VGE =15V IC = 200A TJ = 150°C 12 Reverse Bias Safe Operating Area 500 400 Eoff Eon 8 IF (A) E (mJ) 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 2Ω TJ = 150°C 12 TJ=25°C 150 0.5 Energy losses vs Collector Current Transfert Characteristics 400 IC (A) VGE=9V 50 TJ=25°C 0 VGE=15V 200 150 0 VGE=13V 250 IC (A) IC (A) TJ=150°C 250 50 VGE=19V 300 TJ=125°C 300 TJ = 150°C 350 300 200 4 Eon Er VGE=15V TJ=150°C RG=2Ω 100 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.15 0.7 0.1 April, 2009 IGBT 0.2 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–5 APTGT200A60T3AG – Rev 1 Thermal Impedance (°C/W) 0.25 APTGT200A60T3AG Forward Characteristic of diode 400 100 VCE=300V D=50% RG=2Ω TJ=150°C ZVS ZCS 80 350 300 250 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 200 TJ=125°C 150 40 Hard switching 20 TJ=150°C 100 50 TJ=25°C 0 0 0 50 100 150 IC (A) 200 0 250 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.15 0.1 0.05 Diode 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGT200A60T3AG – Rev 1 April, 2009 Rectangular Pulse Duration in Seconds