RENESAS BB502MBS-TL-H

Preliminary Datasheet
BB502M
R07DS0284EJ0600
(Previous: REJ03G0833-0500)
Rev.6.00
Mar 28, 2011
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
•
•
•
•
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
Notes:
1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “BS–”.
2. BB502M is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Ratings
6
Unit
V
+6
–0
V
Gate2 to source voltage
VG2S
V
Drain current
Channel power dissipation
Channel temperature
Storage temperature
ID
Pch
Tch
Tstg
+6
–0
20
150
150
–55 to +150
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
mA
mW
°C
°C
Page 1 of 10
BB502M
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
Min
6
+6
+6
—
—
0.5
Typ
—
—
—
—
—
0.7
Max
—
—
—
+100
+100
1.0
Unit
V
V
V
nA
nA
V
VG2S(off)
0.5
0.7
1.0
V
Drain current
ID(op)
8
11
14
mA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 180 kΩ
Forward transfer admittance
|yfs|
20
25
30
mS
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Ciss
Coss
Crss
PG
1.4
0.7
—
17
1.7
1.1
0.02
22
2.0
1.5
0.05
—
pF
pF
pF
dB
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 180 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 180 kΩ
f = 1 MHz
NF
—
1.6
2.2
dB
Gate2 to source cutoff voltage
Noise figure
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
Test conditions
ID = 200 μA, VG1S = VG2S = 0
IG1 = +10 μA, VG2S = VDS = 0
IG2 = +10 μA, VG1S = VDS = 0
VG1S = +5 V, VG2S = VDS = 0
VG2S = +5 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 μA
VDS = 5 V, VG1S = 5 V
ID = 100 μA
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 180 kΩ
f = 900 MHz
Page 2 of 10
BB502M
Preliminary
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Application Circuit
VDS = 5 V
VAGC = 4 to 0.3 V
BBFET
RFC
Output
Input
RG
VGG = 5 V
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
Page 3 of 10
BB502M
Preliminary
900MHz Power Gain, Noise Figure Test Circuit
VD
VG1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
Output (50Ω)
D
G2
L3
Input (50Ω)
L4
G1
S
L1
L2
C1
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
C2
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
180 kΩ
47 kΩ
4.7 kΩ
L2:
L1:
10
3
3
8
10
26
(φ1mm Copper wire)
Unit: mm
21
L4:
L3:
18
10
10
7
7
29
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
Page 4 of 10
BB502M
Preliminary
Typical Output Characteristics
20
100
50
0
50
100
150
kΩ
kΩ
12
0
0
=
330
1
2
3
kΩ
4
5
Drain Current vs. Gate1 Voltage
20
VDS = 5 V
RG = 120 kΩ
3V
2V
8
4
VG2S = 1 V
1
2
3
4
16
8
4
0
5
4V
2V
VG2S = 1 V
3
4
Gate1 Voltage VG1 (V)
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
5
Forward Transfer Admittance |yfs| (mS)
12
2
2
3
4
5
Forward Transfer Admittance
vs. Gate1 Voltage
16
1
1
Gate1 Voltage VG1 (V)
VDS = 5 V
RG = 270 kΩ
4
2V
VG2S = 1 V
20
3V
4V
3V
Drain Current vs. Gate1 Voltage
8
VDS = 5 V
RG = 180 kΩ
12
Gate1 Voltage VG1 (V)
Drain Current ID (mA)
G
4
Drain Current vs. Gate1 Voltage
Drain Current ID (mA)
Drain Current ID (mA)
8
Drain to Source Voltage VDS (V)
4V
0
kΩ
0
18 k Ω
0
22 Ω
k
0
27
Ambient Temperature Ta (°C)
12
0
12
0
200
20
16
16
15
150
VG2S = 4 V
VG1 = VDS
R
200
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
30
24
VDS = 5 V
RG = 120 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Page 5 of 10
BB502M
Preliminary
Forward Transfer Admittance
vs. Gate1 Voltage
30
24
VDS = 5 V
RG = 180 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance
vs. Gate1 Voltage
30
VDS = 5 V
RG = 270 kΩ
24 f = 1 kHz
18
12
6
VG2S = 1 V
0
Noise Figure NF (dB)
Power Gain PG (dB)
5
4
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
500
200
3
2
1
0
100
1000
Gate Resistance RG (kΩ)
200
500
1000
Gate Resistance RG (kΩ)
Power Gain vs. Drain Current
Noise Figure vs. Drain Current
30
4
25
Noise Figure NF (dB)
Power Gain PG (dB)
4
Noise Figure vs. Gate Resistance
15
20
15
5
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
0
0
5
10
3
Power Gain vs. Gate Resistance
20
0
100
2
Gate1 Voltage VG1 (V)
25
5
1
Gate1 Voltage VG1 (V)
30
10
4V
3V
10
15
Drain Current ID (mA)
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
20
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
3
2
1
0
0
5
10
15
20
Drain Current ID (mA)
Page 6 of 10
BB502M
Preliminary
Power Gain vs.
Gate2 to Source Voltage
Drain Current vs. Gate Resistance
25
VDS = VG1 = 5 V
VG2S = 4 V
15
Power Gain PG (dB)
Drain Current ID (mA)
20
10
5
0
100
500
200
20
15
10
VDS = 5 V
RG = 180 kΩ
f = 900 MHz
5
0
1
1000
4
3
Gate2 to Source Voltage VG2S (V)
Gate Resistance RG (kΩ)
Noise Figure vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
5
4
VDS= 5 V
RG = 180 kΩ
f = 900 MHz
4
Input Capacitance Ciss (pF)
Noise Figure NF (dB)
2
3
2
1
1
2
4
3
Gate2 to Source Voltage VG2S (V)
3
2
1
0
VDS = 5 V
RG = 180 kΩ
f = 1 MHz
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
Gain Reduction GR (dB)
0
10
20
30
VDS = VG1 = 5 V
VG2S = 4 V
RG = 180 kΩ
40
50
4
3
2
1
0
Gate2 to Source Voltage VG2S (V)
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
Page 7 of 10
BB502M
Preliminary
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
1
90°
.8
1.5
.6
60°
120°
2
Scale: 1 / div.
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–60°
–120°
–1.5
–90°
Test Condition; VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Test Condition: VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
90°
Scale: 0.002 / div.
.8
60°
120°
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition: VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
–2
–.6
–.8
–1
–1.5
Test Condition: VDS = 5 V , VG1 = 5 V
VG2S = 4 V , RG = 180 kΩ ,
Zo = 50Ω
50 to 1000 MHz (50 MHz step)
Page 8 of 10
BB502M
Preliminary
S Parameter
(VDS = VG1 = 5V, VG2S = 4V, RG = 180kΩ, Zo = 50Ω)
S11
f(MHz)
S21
S12
S22
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
MAG.
0.994
0.994
0.991
0.985
0.985
0.975
0.969
0.962
0.954
0.945
0.935
0.925
0.918
0.909
0.898
0.887
ANG.
–2.8
–5.7
–9.2
–12.5
–15.5
–18.7
–22.0
–24.9
–27.7
–30.8
–33.8
–36.6
–39.5
–42.5
–45.0
–47.8
MAG.
2.52
2.51
2.50
2.47
2.46
2.43
2.40
2.38
2.35
2.31
2.28
2.25
2.21
2.18
2.14
2.09
ANG.
176.2
172.4
168.1
164.1
160.0
156.4
152.3
148.6
144.6
141.0
136.7
133.4
130.3
126.1
122.9
119.5
MAG.
0.00072
0.00161
0.00230
0.00297
0.00374
0.00436
0.00507
0.00557
0.00625
0.00663
0.00721
0.00747
0.00761
0.00807
0.00828
0.00801
ANG.
88.6
80.9
86.6
78.0
78.9
80.6
70.9
77.3
72.4
70.0
70.5
68.4
65.6
65.6
67.6
65.1
MAG.
0.995
0.998
0.997
0.996
0.994
0.992
0.990
0.989
0.987
0.984
0.981
0.978
0.975
0.972
0.969
0.965
ANG.
–2.2
–4.0
–6.2
–8.2
–10.2
–12.2
–14.2
–16.3
–18.5
–20.4
–22.4
–24.3
–26.4
–28.3
–30.2
–32.2
850
900
950
1000
0.874
0.862
0.855
0.845
–50.6
–53.0
–55.5
–58.1
2.07
2.03
1.99
1.95
116.0
112.7
109.4
106.1
0.00815
0.00832
0.00738
0.00802
63.6
65.1
61.8
65.8
0.961
0.958
0.954
0.951
–34.2
–36.1
–37.9
–39.8
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
Page 9 of 10
BB502M
Preliminary
Package Dimensions
Package Name
MPAK-4
JEITA Package Code
SC-61AA
RENESAS Code
PLSP0004ZA-A
D
Previous Code
MPAK-4 / MPAK-4V
MASS[Typ.]
0.013g
A
e
e2
b1
Q
B
c
B
E
HE
L
A
Reference Dimension in Millimeters
Symbol
Min
Nom Max
LP
L1
A
A3
x M S
b
A
e2
A2
e
I1
A
b5
e1
A1
y S
S
b
b1
I1
c
c
b4
A-A Section
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
c
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
I1
Q
1.0
0
1.0
0.35
0.55
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.6
0.16
1.5
0.95
0.85
2.8
1.3
0.1
1.2
0.5
0.7
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.05
0.55
0.75
1.95
1.05
0.3
Ordering Information
Orderable Part Number
BB502MBS-TL-E
BB502MBS-TL-H
Note:
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
R07DS0284EJ0600 Rev.6.00
Mar 28, 2011
Page 10 of 10
Notice
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Colophon 1.1