BB639/BB659... Silicon Variable Capacitance Diodes For tuning of extended frequency band in VHF TV / VTR tuners High capactance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB639 BB659 1 2 Type BB639 BB659 Package SOD323 SCD80 Configuration single single LS (nH) Marking 1.8 yellow S 0.6 DE Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 Peak reverse voltage VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 V ( R 5k ) 1 Nov-07-2002 BB639/BB659... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 36 38.3 40 VR = 2 V, f = 1 MHz 27.7 29.75 31.8 VR = 25 V, f = 1 MHz 2.5 2.85 3.2 VR = 28 V, f = 1 MHz 2.4 2.6 2.9 CT1 /CT28 13.5 14.7 - CT2 /CT25 9.8 10.4 - Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz CT/CT Capacitance matching1) % VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence BB639 - - 2.5 - 0.3 1 - 0.4 2 - 0.65 0.7 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequence BB659 VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence BB659 Series resistance rS VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 BB639/BB659... Diode capacitance CT = (VR ) Temperature coefficient of the diode capacitance TCc = (VR ) f = 1MHz 10 -3 40 pF 1/°C TC C CT 30 25 10 -4 20 15 10 5 0 0 5 10 15 20 V 10 -5 0 10 30 10 1 V 2 10 2 VR VR Reverse current I R = (TA) Reverse current IR = VR = 28V TA = Parameter 10 10 (VR) 10 3 3 85°C pA pA 10 2 IR 2 IR 10 25°C 10 1 10 1 10 0 10 0 -30 -10 10 30 50 70 °C 10 -1 0 10 100 TA 10 1 V VR 3 Nov-07-2002