INFINEON BCP54M

BCP 54M ... BCP 56M
NPN Silicon AF Transistors
4
• For AF driver and output stages
5
• High collector current
• Low collector-emitter saturation voltage
3
• Complementary types: BCP 51M...BCP 53M(PNP)
2
1
VPW05980
Type
Marking Ordering Code Pin Configuration
BCP 54M
BAs
Q62702-C2595 1 = B
BCP 55M
BEs
Q62702-C2606
BCP 56M
BHs
Q62702-C2607
2=C
3=E
Package
4 n.c.
5=C
SCT-595
Maximum Ratings
Parameter
Symbol
BCP 54M BCP 55M BCP 56M Unit
Collector-emitter voltage
VCEO
45
60
80
Collector-base voltage
VCBO
45
60
100
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
Peak collector current
I CM
1.5
A
Base current
IB
100
mA
Peak base current
I BM
200
Total power dissipation, T S ≤ 77 °C
Ptot
1.7
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
1
V
mA
-65...+150
Thermal Resistance
Junction ambient 1)
RthJA
≤98
Junction - soldering point
RthJS
≤43
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
Semiconductor Group
11
Au 1998-11-01
-11-1998
BCP 54M ... BCP 56M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
I C = 10 mA, I B = 0
BCP 54M
45
-
-
BCP 55M
60
-
-
BCP 56M
80
-
-
BCP 54M
45
-
-
BCP 55M
60
-
-
BCP 56M
100
-
-
V(BR)EBO
5
-
-
I CBO
-
-
100
nA
I CBO
-
-
20
µA
hFE
25
-
-
-
hFE
40
-
250
-
hFE
25
-
-
-
VCEsat
-
-
0.5
V
VBE(ON)
-
-
1
fT
-
100
-
Collector-base breakdown voltage
I C = 100 µA, IB = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
I E = 10 µA, I C = 0
Collector cutoff current
VCB = 30 V, I E = 0
Collector cutoff current
VCB = 30 V, I E = 0 , TA = 150 °C
DC current gain 1)
I C = 5 mA, V CE = 2 V
DC current gain 1)
I C = 150 mA, V CE = 2 V
DC current gain 1)
I C = 500 mA, V CE = 2 V
Collector-emitter saturation voltage1)
I C = 500 mA, IB = 50 mA
Base-emitter voltage 1)
I C = 500 mA, V CE = 2 V
AC Characteristics
Transition frequency
MHz
I C = 50 mA, V CE = 10 V, f = 100 MHz
1) Pulse test: t ≤ 300µs, D = 2%
Semiconductor Group
Semiconductor Group
22
Au 1998-11-01
-11-1998
BCP 54M ... BCP 56M
DC current gain hFE = f (I C)
Total power dissipation P tot = f (T A*;T S)
* Package mounted on epoxy
VCE = 2V
10 3
2000
mW
h FE
BCP 54...56
EHP00268
5
1600
TS
P tot
1400
10 2
100 C
25 C
-50 C
1200
5
1000
TA
800
10 1
600
5
400
200
0
0
20
40
60
80
120 °C
100
10 0 0
10
150
10 1
10 2
10 3 mA 10 4
ΙC
TA,TS
Permissible Pulse Load
Permissible Pulse Load R thJS = f (tp)
Ptotmax / PtotDC = f (tp)
10 2
10 3
Ptotmax / PtotDC
RthJS
K/W
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
-2
s
10
10 0 -6
10
0
TS
Semiconductor Group
Semiconductor Group
-
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
33
Au 1998-11-01
-11-1998
BCP 54M ... BCP 56M
Collector cutoff current I CBO = f (T A)
Transition frequency fT = f (IC)
VCB = 30V
VCE = 10V
10 4
Ι CBO
BCP 54...56
EHP00269
nA
10
fT
max
3
BCP 54...56
10 3
EHP00267
MHz
10 2
10 2
typ
10 1
5
10 0
10 -1
0
50
100
C
10 1
150
10 1
10 0
10 2
mA
ΙC
TA
Base-emitter saturation voltage
Collector-emitter saturation voltage
I C = f (VBEsat), hFE = 10
IC = f (VCEsat), h FE = 10
10 4
ΙC
BCP 54...56
EHP00270
10 4
ΙC
mA
BCP 54...56
EHP00271
mA
10 3
10 3
100 C
25 C
-50 C
10 2
100 C
25 C
-50 C
10 2
10 1
10 1
10 0
10 3
0
0.2
0.4
0.6
0.8
V
10 0
1.2
0.2
0.4
0.6
V
0.8
V CEsat
V BEsat
Semiconductor Group
Semiconductor Group
0
44
Au 1998-11-01
-11-1998