Inchange Semiconductor Product Specification BD746/A/B/C Silicon PNP Power Transistors · DESCRIPTION ·With TO-3PN package ·Complement to type BD745/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD746 Collector-base voltage -70 Open emitter VEBO -90 BD746C -110 BD746 -45 Collector-emitter voltage Emitter-base voltage V BD746B BD746A VCEO UNIT -50 BD746A VCBO VALUE -60 Open base V BD746B -80 BD746C -100 Open collector -5 V IC Collector current -20 A ICM Collector current-peak -25 A IB Base current -7 A PC Collector power dissipation TC=25℃ 115 Ta=25℃ 3.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BD746/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD746 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -45 BD746A -60 IC=-30mA; IB=0 V BD746B -80 BD746C -100 VCEsat-1 Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-20 A;IB=-5 A -3.0 V VBE -1 Base-emitter on voltage IC=-5A ; VCE=-4V -1.0 V VBE -2 Base-emitter on voltage IC=-20A ; VCE=-4V -3.0 V ICEO Collector cut-off current -0.1 mA VCE=-50V; VBE=0 TC=125℃ VCE=-70V; VBE=0 TC=125℃ VCE=-90V; VBE=0 TC=125℃ VCE=-110V; VBE=0 TC=125℃ -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 mA -0.5 mA BD746/A VCE=-30V; IB=0 BD746B/C VCE=-60V; IB=0 BD746 BD746A ICBO Collector cut-off current BD746B BD746C IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 40 hFE-2 DC current gain IC=-5A ; VCE=-4V 20 hFE-3 DC current gain IC=-20A ; VCE=-4V 5 150 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=-5 A;IB1=-IB2=-0.5 A VBE(off)=4.2V; RL=6Ω tp=20μs 0.02 μs 0.12 μs 0.6 μs 0.3 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.1 ℃/W Inchange Semiconductor Product Specification BD746/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3