PD - 9.1410A
IRFP044N
HEXFET® Power MOSFET
l
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.020Ω
G
ID = 53A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
Units
53
37
180
120
0.77
± 20
230
28
12
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
1.3
–––
40
°C/W
8/25/97
IRFP044N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.017
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
80
43
52
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1500
450
160
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.020
Ω
VGS = 10V, ID = 29A
4.0
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, I D = 28A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
61
ID = 28A
13
nC VDS = 44V
24
V GS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
I D = 28A
ns
–––
RG = 12Ω
–––
RD = 0.98Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
53
––– –––
showing the
A
G
integral reverse
––– ––– 180
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
––– 72 110
ns
TJ = 25°C, IF = 28A
––– 210 310
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 410µH
RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions
IRFP044N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rc e C u rre n t (A )
D
TOP
100
10
4.5 V
2 0µ s PU LSE W ID TH
TC = 2 5°C
1
0.1
1
10
A
100
4 .5V
10
20 µs P UL SE W IDTH
TC = 17 5°C
1
100
0.1
V D S , D rain-to-S ource V oltage (V )
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D rain -to- S ou rce C ur ren t (A )
2.5
TJ = 2 5 ° C
TJ = 1 7 5 ° C
10
V DS = 2 5 V
2 0 µ s P U L SE W ID TH
4
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
Fig 2. Typical Output Characteristics
1000
1
10
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
100
1
10
A
I D = 46 A
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP044N
20
V GS
C is s
C rs s
C o ss
C , C a p a c ita n c e (p F )
2400
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
V G S , G a te -to -S o u rce V o lta g e (V )
2800
V D S = 44 V
V D S = 28 V
16
C is s
2000
12
1600
C os s
1200
800
C rs s
400
0
10
8
4
FO R TEST C IRC U IT
SEE FIG UR E 13
0
A
1
0
100
10
20
30
40
50
A
60
Q G , T otal G ate Charge (nC)
V D S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O P ER A TION IN TH IS A R EA L IM ITE D
B Y R D S (o n)
I D , D rain Current (A )
I S D , R everse D rain C urrent (A )
I D = 28 A
100
T J = 1 75 °C
T J = 25 °C
10
VG S = 0 V
1
0.4
0.8
1.2
1.6
2.0
V S D , S ource-to-D rain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.4
10 µs
100
10 0µ s
10
1m s
10 m s
T C = 25 °C
T J = 17 5 °C
S in g le Pu lse
1
1
A
10
100
V D S , D rain-to-Source V oltage (V )
Fig 8. Maximum Safe Operating Area
IRFP044N
RD
VDS
60
VGS
I D , Drain Current (A)
D.U.T.
RG
50
+
-VDD
10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
T C , Case Temperature
150
175
( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRFP044N
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
500
TO P
BO TTOM
400
300
200
100
0
V D D = 2 5V
25
VDS
ID
1 1A
20A
28 A
A
50
75
100
125
150
175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
+
V
- DS
IRFP044N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFP044N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
-B -
0 .25 (.0 1 0) M
D B M
-A 5 .5 0 (.2 1 7 )
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
2X
1
2
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
4
NOT ES :
5. 50 (.2 17 )
4. 50 (.1 77 )
1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
T O-247-A C.
3
-C -
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
2X
5 .45 (.2 1 5)
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
0 .8 0 (. 03 1 )
3 X 0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0 .25 (.0 10 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
C A S
2.6 0 (.10 2 )
2.2 0 (.08 7 )
LEAD AS SIGN MENT S
1
2
3
4
-
G ATE
DRAIN
SO URCE
DRAIN
Part Marking Information
TO-247AC
E X AM PLE : T HI S IS A N IRF 1010
E XAM P LW
E IT
: HT HAISS SISE MB
AN LY
IR F PE 30
IT H AS SE M BL Y
LO T WCO
DE 9B 1M
LOT C ODE 3A 1Q
A
IN TE R NA T ION A L
IN TE R N A TIO N A L
R EC T IF IER
R E C T IF IE R
LO
L O GGO
O
IRIR
FPFE3
0
1010
9246
3A 19B
Q 9 31M
02
A SMSBL
EMY B LY
A SSE
L O TLO TC O DCO
E DE
A
P AR
M BM
ERBE R
P ATRTN UNU
D A TE C OD E
D A TE C O D E
(Y YW W )
(YYW W )
Y Y = YE A R
YY = YE AR
= W
WW
W WW EE
K E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97