IRL3803 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 30V RDS(on) = 0.006Ω G ID = 140A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Units 140 98 470 200 1.3 ±16 610 71 20 5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA 1/8 Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. Typ. Max. Units –––– –––– –––– –––– 0.50 –––– 0.75 –––– 62 °C/W www.freescale.net.cn IRL3803 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. 30 ––– ––– ––– 1.0 55 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.052 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 230 29 35 Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.006 VGS = 10V, ID = 71A Ω 0.009 VGS = 4.5V, ID = 59A ––– V VDS = V GS, ID = 250µA ––– S V DS = 25V, ID = 71A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13 ––– VDD = 15V ––– ID = 71A ns ––– RG = 1.3Ω, VGS = 4.5V ––– RD = 0.20Ω, See Fig. 10 Between lead, ––– 4.5 ––– 6mm (0.25in.) nH from package ––– 7.5 ––– and center of die contact ––– 5000 ––– VGS = 0V ––– 1800 ––– pF VDS = 25V ––– 880 ––– ƒ = 1.0MHz, See Fig. 5 D G S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting TJ = 25°C, L = 180µH RG = 25Ω, IAS = 71A. (See Figure 12) ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2/8 Min. Typ. Max. Units Conditions MOSFET symbol ––– ––– 140 showing the A G integral reverse ––– ––– 470 p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 71A, VGS = 0V ––– 120 180 ns TJ = 25°C, IF = 71A ––– 450 680 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D S Pulse width ≤ 300µs; duty cycle ≤ 2%. Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 www.freescale.net.cn IRL3803 10000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V 10000 TOP 1000 ID , Drain-to-Source Current (A ) ID , D rain-to-S ource C urrent (A ) 1000 100 10 1 0.1 2 .0 V 2 0µ s P U LS E W ID T H T J = 2 5°C 0.01 0.1 1 10 A 100 10 0.1 100 0.1 TJ = 1 75 °C 10 1 0.1 V DS = 2 5V 2 0µ s P U L S E W ID TH 5.0 6.0 7.0 8.0 9.0 V G S , G ate-to -So urce Voltag e (V) Fig 3. Typical Transfer Characteristics 3/8 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D , D rain-to-So urce C urren t (A ) T J = 2 5°C 4.0 10 A 100 Fig 2. Typical Output Characteristics, TJ = 175oC 2.0 3.0 1 V D S , D rain-to-S ource V oltage (V ) 1000 0.01 2 0µ s P U LS E W ID TH T J = 1 75 °C 0.01 Fig 1. Typical Output Characteristics, TJ = 25oC 100 2.0V 1 V D S , D rain-to-S ource V oltage (V ) 2.0 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP A I D = 1 20 A 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature www.freescale.net.cn IRL3803 8000 V GS C iss C C iss C rs s o ss 6000 C oss = = = = 15 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d V G S , G a te-to-S ou rc e V o ltag e (V ) C , Capacitance (pF) 10000 C rss 2000 0 9 6 3 FO R TE S T CIR C U IT S E E FIG U R E 1 3 0 A 10 V D S = 2 4V V D S = 1 5V 12 4000 1 I D = 7 1A 100 0 V D S , D rain-to-S ourc e V oltage (V ) 120 160 A 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) 10µ s I D , D rain Current (A ) I S D , R everse Drain C urrent (A ) 80 Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 17 5°C 100 T J = 25 °C 100µ s 100 1m s V G S = 0V 10 0.4 0.8 1.2 1.6 2.0 2.4 2.8 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4/8 40 A 3.2 T C = 25 °C T J = 17 5°C S ing le P u lse 10 1 10m s 10 A 100 V D S , D rain-to-S ource V oltage (V ) Fig 8. Maximum Safe Operating Area www.freescale.net.cn IRL3803 140 120 I D , Drain Current (A) RD VDS LIMITED BY PACKAGE VGS D.U.T. RG 100 + -VDD 80 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 P DM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5/8 www.freescale.net.cn IRL3803 D.U.T. RG + V - DD IAS 4.5 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS E A S , S ingle Pulse Avalanc he E nergy (m J) 1500 L VDS TOP B O TT O M 1200 ID 29 A 5 0A 71 A 900 600 300 0 V D D = 15 V 25 tp A 50 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) VDD Fig 12c. Maximum Avalanche Energy Vs. Drain Current VDS IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 4.5 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6/8 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.freescale.net.cn IRL3803 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 7/8 www.freescale.net.cn