DISCRETE SEMICONDUCTORS DATA SHEET BLF346 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 02 Philips Semiconductors Product specification VHF power MOS transistor BLF346 FEATURES PINNING-SOT119 • High power gain PIN SYMBOL • Easy power control DESCRIPTION 1 s source • Good thermal stability 2 s source • Gold metallization ensures excellent reliability. 3 g gate 4 d drain APPLICATIONS 5 s source • Linear amplifier applications in Television transmitters and transposers. 6 s source DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information. handbook, halfpage CAUTION 1 2 3 4 5 6 d g The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. s MAM268 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance in a linear amplifier. MODE OF OPERATION f (MHz) VDS (V) ID (A) Class-A 224.25 28 3 Th (°C) PL (W) GP (dB) dim (dB) (1) 70 >24 >14 −52 25 typ. 30 typ. 16.5 −52 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 02 2 Philips Semiconductors Product specification VHF power MOS transistor BLF346 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS drain-source voltage − 65 V VGSS gate-source voltage − ±20 V ID DC drain current − 13 A Ptot total power dissipation − 130 W Tstg storage temperature up to Tmb = 25 °C −65 150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 130 W 1.35 K/W Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 130 W 0.2 K/W MRA931 50 MGG104 200 handbook, halfpage handbook, halfpage Ptot ID (A) (W) 150 10 (1) (2) (2) 100 (1) 1 50 10−1 1 10 VDS (V) 0 102 0 (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. 100 Th (°C) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 1996 Oct 02 50 Fig.3 Power derating curves. 3 150 Philips Semiconductors Product specification VHF power MOS transistor BLF346 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 50 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage VDS = 10 V; ID = 50 mA 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs VDS = 10 V; ID = 50 mA − − 100 mV gfs forward transconductance VDS = 10 V; ID = 5 A 3 4.2 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 5 A − 0.2 0.3 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 22 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 225 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 180 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 25 − pF MGG105 2 handbook, halfpage ID (A) T.C. (mV/K) 0 30 −2 20 −4 10 −6 10−2 10−1 1 ID (A) 0 10 0 10 15 20 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current; typical values. 1996 Oct 02 5 VGS (V) VDS = 10 V. Fig.4 MGG106 40 handbook, halfpage Fig.5 4 Drain current as a function of gate-source voltage; typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF346 MGG107 340 MRA930 800 handbook, halfpage C (pF) RDS on (mΩ) 600 C os 280 400 C is 220 200 0 160 0 30 60 90 0 120 150 Tj (°C) ID = 5 A; VGS = 10 V. Fig.6 Fig.7 MGG108 300 handbook, halfpage Crs (pF) 200 100 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. 1996 Oct 02 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature; typical values. 0 10 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF346 APPLICATION INFORMATION RF performance in a linear amplifier (common source class-A circuit). Rth mb-h = 0.2 K/W; ZL = 1.1 + j0.2 Ω unless otherwise specified. MODE OF OPERATION f (MHz) Class-A ID (A) VDS (V) 224.25 28 3 Th (°C) Po sync (W) GP (dB) dim (dB) (1) 70 > 24 > 14 −52 25 typ. 30 typ. 16.5 −52 70 typ. 20 typ. 14.5 −55 25 typ. 22 typ. 15 −55 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 225 MHz at rated output power. MGG109 −50 handbook, halfpage dim (dB) −55 (1) (2) −60 −65 −70 0 10 20 30 Po sync (W) 40 (1) Th = 70 °C. (2) Th = 25 °C. Fig.9 Intermodulation distortion as a function of peak synchronized output power. 1996 Oct 02 6 Philips Semiconductors Product specification VHF power MOS transistor BLF346 handbook, full pagewidth C10 C2 50 Ω input C1 C4 L4 DUT C14 L7 L2 C3 C15 C5 L5 C8 R1 R5 C6 C9 C12 R2 C7 L6 C13 R4 VB R3 VDS MGG113 Fig.10 Test circuit for class-A operation at f = 225 MHz. 1996 Oct 02 50 Ω output BLF346 C11 L1 C16 L3 7 L8 Philips Semiconductors Product specification VHF power MOS transistor BLF346 List of components (see Figs 10 and 11). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 2 to 18 pF C2 multilayer ceramic chip capacitor (note 1) 10 pF, 500 V 2222 809 09003 C3, C15, C16 film dielectric trimmer 4 to 40 pF C4, C5 multilayer ceramic chip capacitor (note 1) 56 pF, 500 V C6, C12 multilayer ceramic chip capacitor (note 1) 680 pF, 500 V C7, C8, C9 multilayer ceramic chip capacitor 100 nF, 50 V C10, C11 multilayer ceramic chip capacitor (note 1) 43 pF, 500 V C13 electrolytic capacitor 10 µF, 63 V C14 multilayer ceramic chip capacitor (note 1) 27 pF, 500 V L1 4 turns enamelled 0.7 mm copper wire 42.4 nH length 4 mm; int. dia. 3 mm; leads 2 × 5 mm L2 stripline (note 2) 50 Ω length 49 mm; width 2.8 mm L3, L4 stripline (note 2) 31 Ω length 11.5 mm; width 6 mm L5 2 turns enamelled 1.5 mm copper wire 18.7 nH length 8 mm; int. dia. 4 mm; leads 2 × 5 mm L6 grade 3B Ferroxcube RF choke L7 stripline (note 2) 31 Ω length 40 mm; width 6 mm L8 3 turns enamelled 1.5 mm copper wire 28.8 nH length 8 mm; int. dia. 4 mm; leads 2 × 5 mm R1 metal film resistor 1 kΩ, 0.4 W 2322 151 71002 R2 metal film resistor 100 kΩ, 0.4 W 2322 151 71004 R3 10 turns cermet potentiometer 100 Ω R4 metal film resistor 316 kΩ, 0.4 W 2322 153 53161 R5 metal film resistor 10 Ω, 0.4 W 2322 153 51009 2222 809 08002 2222 852 47104 2222 030 38109 4312 020 36642 Notes 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄ inch. 16 1996 Oct 02 8 Philips Semiconductors Product specification VHF power MOS transistor BLF346 150 handbook, full pagewidth strap strap rivet rivet rivet rivet rivet rivet rivet 70 rivet strap strap mounting screws (8×) +VDS R3 L6 C7 C1 L1 C12 R5 R2 C6 R1 L5 L2 C16 C8 C9 C10 C4 C2 C13 L7 L4 L3 C5 C14 L8 C11 C15 C3 MGG114 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets. Fig.11 Component layout for 225 MHz class-A test circuit. 1996 Oct 02 9 Philips Semiconductors Product specification VHF power MOS transistor BLF346 MGG110 MGG111 4 2 handbook, halfpage handbook, halfpage Zi (Ω) ri 2 ZL (Ω) RL 0 1 −2 XL xi −4 −6 160 180 200 220 0 160 240 180 200 220 240 f (MHz) f (MHz) Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C. Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C. Fig.12 Input impedance as a function of frequency (series components); typical values. Fig.13 Load impedance as a function of frequency (series components); typical values. MGG112 20 handbook, halfpage Gp (dB) 16 handbook, halfpage 12 8 Zi ZL MBA379 4 0 160 180 200 220 240 f (MHz) Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C. Fig.15 Power gain as a function of frequency; typical values. Fig.14 Definition of MOS impedance. 1996 Oct 02 10 Philips Semiconductors Product specification VHF power MOS transistor BLF346 PACKAGE OUTLINE 22 max handbook, full pagewidth 6.35 0.14 4 min ceramic 1 2 3 4 5 6 5.7 5.3 6.48 12.96 5.5 5.0 25.2 max 18.42 3.8 min 13 max 5.7 5.3 BeO metal 3.35 (2x) 3.04 MBC877 12.2 2.5 4.50 4.05 7.5 max Dimensions in mm. Fig.16 SOT119. 1996 Oct 02 11 Philips Semiconductors Product specification VHF power MOS transistor BLF346 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 02 12 Philips Semiconductors Product specification VHF power MOS transistor BLF346 NOTES 1996 Oct 02 13 Philips Semiconductors Product specification VHF power MOS transistor BLF346 NOTES 1996 Oct 02 14 Philips Semiconductors Product specification VHF power MOS transistor BLF346 NOTES 1996 Oct 02 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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