SEMICONDUCTOR KDR701S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE For High frequency rectification FEATURES E B L L Low Forward Voltage : VF max=0.55V. H UNIT VRRM 30 V Reverse Voltage VR 30 V Average Forward Current IO 0.7 A IFSM 5 A Junction Temperature Tj 125 Storage Temperature Tstg -55 125 Repetitive Peak Reverse Voltage Non-repetitive peak surge current P J RATING K SYMBOL P N CHARACTERISTIC 1 ) C MAXIMUM RATING (Ta=25 3 G A 2 D IR=700mA recification possible. DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DK ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1mA 30 - - V Forward Voltage VF IF=0.7A - - 0.55 V Reverse Current IR VR=30V - - 80 A Total Capacitance CT VR=0V, f=1MHz - 190 - pF Reverse Recovery Time trr IR=IF=100mA - 7.5 - nS 2003. 2. 25 Revision No : 1 1/2 KDR701S I R - VR Ta=25 C 30 FORWARD CURRENT I F (mA) REVERSE CURRENT IR (µA) 50 I F - VF 10 5 3 0 10 5 10 15 20 25 2 10 1 0.1 0.01 30 0 100 200 300 400 REVERSE VOLTAGE V R (V) FORWARD VOLTAGE V F (V) I R - Ta VF - Ta 4 500 0.8 Ta=25 C FORWARD VOLTAGE VF (V) REVERSE CURRENT I R (µA) 10 10 Ta=25 C 3 0.001 1 10 10 3 2 10 I F =700mA 0.7 0.6 0.5 0.4 0.3 0.2 1 -40 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) -40 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) TERMINAL CAPACITANCE C T (pF) C T - VR 200 180 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2003. 2. 25 Revision No : 1 2/2