PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package VCES = 900V VCE(on) typ. = 2.25V G @VGE = 15V, IC = 28A E n-cha n ne l Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. Units 900 51 28 204 204 16 204 ± 20 200 78 -55 to + 150 V A V W °C 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.24 ––– 6 (0.21) 0.64 0.83 ––– 40 ––– Units °C/W g (oz) 1 IRG4PF50WD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. 900 — — — — 3.0 — 26 — — — — — — Typ. — 0.295 2.25 2.74 2.12 — -13 39 — — — 2.5 2.1 — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 3.5mA 2.7 IC = 28A VGE = 15V — V IC = 60A See Fig. 2, 5 — IC = 28A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 50V, IC = 28A 500 µA VGE = 0V, VCE = 900V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 6.5 mA VGE = 0V, VCE = 900V, TJ = 150°C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 160 19 53 71 50 150 110 2.63 1.34 3.97 69 52 270 190 6.0 13 3300 200 45 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 240 IC = 28A 29 nC VCC = 400V See Fig. 8 80 VGE = 15V — TJ = 25°C — ns IC = 28A, VCC = 720V 220 VGE = 15V, RG = 5.0Ω 170 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 5.3 — TJ = 150°C, See Fig. 11, 18 — ns IC = 28A, VCC = 720V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 135 ns TJ = 25°C See Fig. 245 TJ = 125°C 14 IF = 16A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 675 nC TJ = 25°C See Fig. 1838 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4PF50WD 40 F or b oth: D uty c y c le : 50% T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified LOAD CURRENT (A) 30 P ow er D is s ipation = 40 W S q u a re w a v e : 60% of rated voltage 20 I 10 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) TJ = 25 ° C I C , Collector-to-Emitter Current (A) 1000 1000 100 100 TJ = 150 ° C 10 V GE = 15V 20µs PULSE WIDTH 1 1 10 TJ = 150 °C TJ = 25 °C 10 V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 10 3 IRG4PF50WD 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 60 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 56 A 2.5 IC = 28 A 2.0 IC = 14 A 1.5 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature °( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.001 0.00001 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PF50WD VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 5000 Cies 4000 3000 2000 C oes 1000 Cres 20 VGE , Gate-to-Emitter Voltage (V) 6000 16 12 8 4 0 0 1 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 100 = 720V = 15V = 25 ° C = 28A 5.0 4.5 4.0 3.5 0 10 20 30 40 RG , Gate Resistance( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 120 160 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE TJ 5.5 I C 40 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 6.0 VCC = 400V I C = 28A 50 RG = 5.0Ω VGE = 15V VCC = 720V IC = 56 A 10 IC = 28 A IC = 14 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature °( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PF50WD RG TJ VCC VGE 1000 = 5.0Ω = 150 ° C = 720V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 16 12 VGE = 20V T J = 125 oC 100 8 4 10 SAFE OPERATING AREA 0 10 20 30 40 50 1 60 1 I C , Collector Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 100 T J = 150°C 10 T J = 125°C T J = 25°C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PF50WD 300 40 VR = 2 00V T J = 125 °C T J = 25°C VR = 20 0V T J = 125°C T J = 25°C 30 200 I R R M - (A ) trr - (n s) I F = 32A I F = 16A I F = 8.0A I F = 32A 20 I F = 16A 100 I F = 8.0A 10 0 100 di f /dt - (A /µ s) 0 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt di f /d t - (A /µ s) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt 1200 1000 VR = 200 V T J = 125°C T J = 25°C VR = 20 0V T J = 12 5°C T J = 25 °C 900 600 di(rec )M /dt - (A /µ s ) Q R R - (nC ) I F = 32A I F = 16A I F = 8.0A 100 I F = 32 A I F =1 6A I F = 8 .0A 300 0 100 di f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 10 100 1000 di f /dt - (A /µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PF50WD Same type device as D .U.T. 430µF 80% of Vce 90% D .U .T. 10% Vge VC 90% t d(off) 10% IC 5% Fig. 18a - Test Circuit for Measurement of tf tr ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs E on Eoff E ts = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Ic dtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIcdtdt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIcdt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PF50WD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* R L= 720V 4 X IC @25°C 0 - 720V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PF50WD Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Case Outline and Dimensions — TO-247AC 3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 1 0) M D B M 15 .90 (.62 6 ) 15 .30 (.60 2 ) -B- -A5.5 0 (.2 17) 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 2X 1 2 -D- 5.3 0 (.20 9) 4.7 0 (.18 5) 2.5 0 (.0 89) 1.5 0 (.0 59) 4 5.5 0 (.2 17) 4.5 0 (.1 77) LEAD 1234- 3 -C- * 1 4 .8 0 (.5 8 3) 1 4 .2 0 (.5 5 9) 2 .40 (.09 4 ) 2 .00 (.07 9 ) 2X 5.4 5 (.21 5) 2X 4.3 0 (.1 70) 3.7 0 (.1 45) 3X 1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M 3 .40 (.13 3) 3 .00 (.11 8) N O TE S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 982 . 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -24 7A C . * 0 .80 (.03 1 ) 0 .40 (.01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) A S S IG N M E N T S GATE CO LLECT O R E M IT T E R CO LLECT O R L O N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER 3X C A S CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P) D im en sio ns in M illim e ters a n d (Inche s) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 7/98 10 www.irf.com