Si9910 Vishay Siliconix Adaptive Power MOSFET Driver1 FEATURES D dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit Protection D trr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible Inputs D Compatible with Wide Range of MOSFET Devices D Bootstrap and Charge Pump Compatible (High-Side Drive) DESCRIPTION The Si9910 Power MOSFET driver provides optimized gate drive signals, protection circuitry and logic level interface. Very low quiescent current is provided by a CMOS buffer and a high-current emitter-follower output stage. This efficiency allows operation in high-voltage bridge applications with “bootstrap” or “charge-pump” floating power supply techniques. Fault protection circuitry senses an undervoltage or output short-circuit condition and disables the power MOSFET. Addition of one external resistor limits maximum di/dt of the external Power MOSFET. A fast feedback circuit may be used to limit shoot-through current during trr (diode reverse recovery time) in a bridge configuration. The non-inverting output configuration minimizes current drain for an n-channel “on” state. The logic input is internally diode clamped to allow simple pull-down in high-side drives. The Si9910 is available in both standard and lead (Pb)-free 8-pin plastic DIP and SOIC packages which are specified to operate over the industrial temperature range of −40 _C to 85 _C. FUNCTIONAL BLOCK DIAGRAM R3 VDS *100 kW VDD Undervoltage/ Overcurrent Protection DRAIN C1 PULL-UP R2 *2 to 5 pF *250 W 2-ms Delay PULL-DOWN INPUT ISENSE R1 *0.1 W VSS * Typical Values 1. Patent Number 484116. Document Number: 70009 S-42043—Rev. H, 15-Nov-04 www.vishay.com 1 Si9910 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltages Referenced to VSS Pin Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C VDD Supply Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 18 V Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C Pin 1, 4, 5, 7, 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD + 0.3 V Pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.7 V to VDD + 0.3 V Power Dissipation (Package)a 8-Pin SOIC (Y Suffix)b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700 mW 8-Pin Plastic DIP (J Suffix)b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700 mW Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA Peak Current (Ipk) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 5.6 mW/_C above 25_C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa Test Conditions Unless Otherwise Specified Parameter Symbol VDD 10.8 V to 16.5 V TA = OperatingTemperature Range Limits Minc Typb Maxc Unit 0.70 x VDD 7.4 6.0 0.35 x VDD V 2.0 3.0 Input High Level Input Voltage VIH Low Level Input Voltage VIL Input Voltage Hysteresis Vh High Level Input Current IIH VIN = VDD "1 Low Level Input Current IIL VIN = 0 V "1 High Level Output Voltage VOH IOH = −200 mA Low Level Output Voltage VOL IOL = 200 mA 0.90 mA Output VDD −3 10.7 1.3 3 8.3 9.2 10.6 Max IS = 2 mA, Input High 100 mV Change on Drain 0.5 0.66 0.8 Input High 8.3 9.1 10.2 12 20.0 Undervoltage Lockout VUVLO ISENSE Pin Threshold VTH Voltage Drain-Source Maximum VDS Input Current for VDS Input IVDS Peak Output Source Current IOS+ 1 Peak Output Sink Current IOS− −1 V mA A Supply Supply Range Supply Current VDD 10.8 16.5 IDD1 Output High, No Load 0.1 1 IDD2 Output Low, No Load 100 500 V mA Dynamic Propagation Delay Time Low to High Level tPLH Propagation Delay Time High to Low Level tPHL Rise Time Fall Time tr 120 CL = 2000 pF 135 50 ns tf 35 Overcurrent Sense Delay (VDS) tDS 1 mS Input Capacitance Cin 5 pF Notes a. Refer to PROCESS OPTION FLOWCHART for additional information. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. www.vishay.com 2 Document Number: 70009 S-42043—Rev. H, 15-Nov-04 Si9910 Vishay Siliconix AC TESTING CONDITIONS VDD 50% IN (IN = L) tPLH VSS tPHL VOH 90% 10% OUT VOL tr tf PIN CONFIGURATIONS AND ORDERING INFORMATION PDIP-8 VDS INPUT VDD DRAIN SOIC-8 8 PULL-UP 2 7 Pull-DOWN 3 6 VSS 1 4 5 ISENSE VDS 1 8 PULL-UP INPUT 2 7 PULL−DOWN VDD 3 6 VSS DRAIN 4 5 ISENSE Top View Top View ORDERING INFORMATION Part Number Temperature Range Package Si9910DY Si9910DY-T1 Si9910DY-T1—E3 Si9910DJ Si9910DJ—E3 Document Number: 70009 S-42043—Rev. H, 15-Nov-04 SOIC-8 −40 to 85_C PDIP 8 PDIP-8 www.vishay.com 3 Si9910 Vishay Siliconix PIN DESCRIPTION Pin 1: VDS Pin 1 or VDS is a sense input for the maximum source-drain voltage limit. Two microseconds after a high transition on input pin 2, an internal timer enables the VDS(max) sense circuitry. A catastrophic overcurrent condition, excessive on-resistance, or insufficient gate-drive voltage can be sensed by limiting the maximum voltage drop across the power MOSFET. An external resistor (R3) is required to protect pin 1 from overvoltage during the MOSFET “off” condition. Exceeding VDS(max) latches the Si9910 “off.” Drive is re-enabled on the next positive- going input on pin 2. If pin 1 is not used, it must be connected to pin 6 (VSS). Pin 2: INPUT A non-inverting, Schmidt trigger input controls the state of the MOSFET gate-drive outputs and enables the protection logic. When the input is low (v VIL), VDD is monitored for an undervoltage condition (insufficiently charged bootstrap capacitor). If an undervoltage (v VDD(min)) condition exists, the driver will ignore a turn-on input signal. An undervoltage (v VDD(min)) condition during an “on” state will not be sensed. Pin 3: VDD VDD supplies power for the driver’s internal circuitry and charging current for the power MOSFET’s gate capacitance. The Si9910 minimizes the internal IDD in the “on” state (gate-drive outputs high) allowing a “floating” power supply to be provided by charge pump or bootstrap techniques. Pin 4: DRAIN Drain is an analog input to the internal dv/dt limiting circuitry. An external capacitor (C1) must be used to protect the input from exposure to the high-voltage (“off” state) drain and to set the power MOSFET’s maximum rate of dv/dt. If dv/dt feedback is not used, pin 4 must be left open. Pin 5: ISENSE ISENSE in combination with an external resistor (R1) protects the power MOSFET from potentially catastrophic peak currents. ISENSE is an analog feedback that limits current during the power MOSFET’s transition to an “on” state. It is intended to protect power MOSFETs (in a half-bridge arrangement) from “shoot-through” current, resulting from excess di/dt and trr of flyback diodes or from logic timing overlap. An 0.8-V drop across (R1) should indicate a current level that is approximately four times the maximum allowable load current. When the ISENSE input is not used, it should be tied to pin 6 (VSS). Pin 6: VSS VSS is the driver’s ground return pin. The applications diagram illustrates the connection of VSS for source-referenced www.vishay.com 4 “floating” applications (half-bridge, high-side) and ground-referenced applications (half-bridge, low-side). Pin 7: PULL-DOWN Pin 8: PULL-UP Pull-up and pull-down outputs collectively provide the power MOSFET gate with charging and discharging currents. Turn “on” or “off” di/dt can be limited by adding resistance (R2) in series with the appropriate output. APPLICATIONS “Floating” High-Side Drive Applications As demonstrated in Figure 1, the Si9910 is intended for use as both a ground-referenced gate driver and as a “high-side” or source-referenced gate driver in half-bridge applications. Several features of the Si9910 permit its use in half-bridge high-side drive applications. A simple and inexpensive method of isolating a floating supply to power the Si9910 in high-side driver applications had to be provided. Therefore, the Si9910 was designed to be compatible with two of the most commonly used floating supply techniques: the bootstrap and the charge pump. Both of these techniques have limitations when used alone. A properly designed bootstrap circuit can provide low-impedance drive which minimizes transition losses and the charge pump circuit provides static operation. The Si9910 is configured to take advantage of either floating supply technique if the application is not sensitive to their particular limitations, or both techniques if switching losses must be minimized and static operation is necessary. The schematic above illustrates both the charge pump and bootstrap circuits used in conjunction with an Si9910 in a high-side driver application. Input signal level shifting is accomplished with a passive pull-up (R4) and n-channel MOSFET (Q2) for pull-down in applications below 500 V. Total node capacitance defines the value of R4 needed to guarantee an input transition rate which safely exceeds the maximum dv/dt rate of the output half-bridge. Using level-shift devices with higher current capabilities may necessitate the addition of current-limiting components such as R5. Bootstrap Undervoltage Lockout When using a bootstrap capacitor as a high-side floating supply, care must be taken to ensure time is available to recharge the bootstrap capacitor prior to turn-on of the high-side MOSFET. As a catastrophic protection against abnormal conditions such as start-up, loss of power, etc., an internal voltage monitor has been included which monitors the bootstrap voltage when the Si9910 is in the low state. The Si9910 will not respond to a high input signal until the voltage on the bootstrap capacitor is sufficient to fully enhance the power MOSFET gate. For more details, please refer to Application Note AN705. Document Number: 70009 S-42043—Rev. H, 15-Nov-04 Si9910 Vishay Siliconix APPLICATION CIRCUIT VDD (12 to 15 V) VDD VDS R3 DRAIN C1 PULL-UP R2 D1 R4 C2 PULL-DOWN INPUT Q1 ISENSE C3 R1 VDD OSC VDS R3’ Motor Q2 CMOS Logic C4 DRAIN C1’ PULL-UP R2’ R5 PULL-DOWN INPUT ISENSE VSS C2 = Bootstrap Cap C3 = Chargepump Cap Q1’ R1’ FIGURE 1. High-Voltage Half-Bridge with Si9910 Drivers Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70009. Document Number: 70009 S-42043—Rev. H, 15-Nov-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1