IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol PACKAGE TO-247 2291.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17465. File Number BRAND D IRFP460 NOTE: When ordering, use the entire part number. G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) 4-359 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFP460 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFP460 500 500 20 12 80 ±20 250 2.0 960 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 500 - - V Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V VDS = Rated BVDSS , VGS = 0V - - 25 µA - - 250 µA 20 - - A Zero Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time ID(ON) VGS = ±20V - - ±100 nA rDS(ON) ID = 11A, VGS = 10V (Figures 8, 9) - 0.24 0.27 Ω gfs td(ON) VDS ≥ 50V, IDS > 11A (Figure 12) 13 19 - S - 23 35 ns - 81 120 ns - 85 130 ns IGSS tr Turn-Off Delay Time VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VDD = 250V, ID = 21A, RGS = 4.3Ω, RD = 12Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature td(OFF) Fall Time tf Total Gate Charge (Gate to Source + Gate-Drain) Gate to Source Charge Qg(TOT) Qgs VGS = 10V, ID = 21A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14). Gate Charge is Essentially Independent of OperatingTemperature - 65 98 ns - 120 190 nC - 18 - nC - 62 - nC - 4100 - pF Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 480 - pF Reverse Transfer Capacitance CRSS - 84 - pF - 5.0 - nH - 13 - nH - - 0.50 oC/W - - 30 oC/W VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) Internal Drain Inductance LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 4-360 Free Air Operation IRFP460 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier MIN TYP MAX UNITS - - 20 A - - 80 A - - 1.8 V 280 580 1200 ns 3.8 8.1 18 µC D G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25Ω, Peak IAS = 20A. Typical Performance Curves Unless Otherwise Specified 20 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 16 12 8 4 0 0 50 100 150 TC , CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 ZθJC, THERMAL IMPEDANCE (oC/W) POWER DISSIPATION MULTIPLIER 1.2 0.5 0.1 0.2 0.1 0.05 PDM 0.02 10-2 0.01 10-3 10-5 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (S) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-361 1 10 IRFP460 Typical Performance Curves 40 2 32 102 5 10µs 100µs 2 10 1ms 5 10ms 2 1 5 T = 25oC C TJ = MAX RATED 2 SINGLE PULSE 0.1 1 2 5 10 VGS = 5.5V 24 16 VGS = 5.0V 8 VGS = 4.5V DC VGS = 4.0V 2 102 5 2 5 0 103 0 50 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA ID, DRAIN CURRENT(A) ID , DRAIN CURRENT (A) VGS = 5.5V 24 16 VGS = 5.0V 8 VGS = 4.5V VGS = 4.0V 16 12 10 TJ = 150oC 1 TJ = 25oC 0.1 10-2 0 20 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0 VGS = 10V 1.5 1.0 0.5 0 VGS = 20V 2.4 20 40 60 ID, DRAIN CURRENT (A) 80 100 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-362 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 11A 1.8 1.2 0.6 0 0 10 FIGURE 7. TRANSFER CHARACTERISTICS NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 2.5 250 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS ≥ 50V VGS = 6.0V VGS = 10V 8 200 102 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 4 150 FIGURE 5. OUTPUT CHARACTERISTICS 40 0 100 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) 32 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6.0V OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 103 5 Unless Otherwise Specified (Continued) -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRFP460 Typical Performance Curves Unless Otherwise Specified (Continued) 1.25 10000 1.15 1.05 0.95 CISS 6000 COSS 4000 0.85 0.75 0 80 40 120 0 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE TJ = 25oC 24 16 TJ = 150oC 8 0 8 5 10 2 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 16 24 ID , DRAIN CURRENT (A) 2 10 32 20 TJ = 150oC 5 TJ = 25oC 2 1 5 2 40 0 0.4 0.8 ID = 21A VDS = 400V VDS = 250V VDS = 100V 12 8 4 0 1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 16 0 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 40 80 120 160 200 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-363 102 PULSE DURATION = 80µs 5 DUTY CYCLE = 0.5% MAX 0.1 0 2 102 ISD, SOURCE TO DRAIN CURRENT (A) 32 1 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS ≥ 50V VGS, GATE TO SOURCE (V) gfs, TRANSCONDUCTANCE (S) 40 CRSS 2000 -40 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 8000 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA 2.0 IRFP460 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS - VGS VDS IAS VDD VDD DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 50% VDD Qg(TOT) 12V BATTERY 0.2µF SAME TYPE AS DUT 50kΩ Qgd Qgs 0.3µF D IG(REF) VDS DUT G 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-364 VGS IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRFP460 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 4-365 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029