Specification Comparison Vishay Siliconix TN0200K vs. TN0200T Description: N-Channel MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: TN0200K-T1 Replaces TN0200T-T1 TN0200K-T1—E3 (Lead Free version) Replaces TN0200T-T1 Summary of Performance: The TN0200K is a technological upgrade with ESD protection for the original TN0200T. The ESD protection diodes on the gate increase Gate-Body Leakage; otherwise both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Symbol TN0200K TN0200T Drain-Source Voltage Parameter VDS 20 20 Gate-Source Voltage VGS "8 "8 0.73 0.73 0.58 0.58 4 4 0.35 0.35 0.22 0.22 Tj and Tstg −55 to 150 −55 to 150 _C RthJA 357 357 _C/W Continuous Drain Current TA = 25_C See Note Pulsed Drain Current ID IDM TA = 25_C Power Dissipation TA = 70_C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient PD Unit V A W SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) TN0200K Parameter Symbol Min TN0200T Typ Max Min 0.6 1.0 0.5 Typ Max 0.9 1.5 Unit Static Drain-Source Breakdown Voltage V(BR)DSS 20 Gate-Threshold Voltage VG(th) 0.45 Gate-Body Leakage IGSS "5000 "100 nA Zero Gate Voltage Drain Current IDSS 1 1 mA On State Drain Current On-State Drain Source On Drain-Source On-Resistance Resistance Forward Transconductance VGS = 4.5 V VGS = 2.5 V VGS = 4.5 V VGS = 2.5 V ID(on) D( ) rDs(on) D ( ) 20 2.5 2.5 1.5 1.5 V A 0.2 0.4 0.29 0.4 0.25 0.5 0.34 0.5 gfs 2.2 VSD 0.8 1.2 0.8 1.2 V Total Gate Charge Qg 1400 2000 1900 2800 pC Gate-Source Charge Qgs 190 50 Gate-Drain Charge Qgd 300 750 td(on) 17 25 8 13 tr 20 30 14 21 td(off) 55 85 21 30 tf 30 45 7 11 Diode Forward Voltage 2.2 W S Dynamic nC Switching Turn-On Time Turn Off Time Turn-Off ns NS denotes parameter not specified. Document Number: 73004 19-May-04 www.vishay.com 1