VISHAY TN0200K

Specification Comparison
Vishay Siliconix
TN0200K vs. TN0200T
Description: N-Channel MOSFET
Package:
SOT-23
Pin Out:
Identical
Part Number Replacements:
TN0200K-T1 Replaces TN0200T-T1
TN0200K-T1ā€”E3 (Lead Free version) Replaces TN0200T-T1
Summary of Performance:
The TN0200K is a technological upgrade with ESD protection for the original TN0200T. The ESD protection diodes on the
gate increase Gate-Body Leakage; otherwise both parts perform identically including limits to the parametric tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Symbol
TN0200K
TN0200T
Drain-Source Voltage
Parameter
VDS
20
20
Gate-Source Voltage
VGS
"8
"8
0.73
0.73
0.58
0.58
4
4
0.35
0.35
0.22
0.22
Tj and Tstg
āˆ’55 to 150
āˆ’55 to 150
_C
RthJA
357
357
_C/W
Continuous Drain Current
TA = 25_C
See Note
Pulsed Drain Current
ID
IDM
TA = 25_C
Power Dissipation
TA = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
PD
Unit
V
A
W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
TN0200K
Parameter
Symbol
Min
TN0200T
Typ
Max
Min
0.6
1.0
0.5
Typ
Max
0.9
1.5
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
20
Gate-Threshold Voltage
VG(th)
0.45
Gate-Body Leakage
IGSS
"5000
"100
nA
Zero Gate Voltage Drain Current
IDSS
1
1
mA
On State Drain Current
On-State
Drain Source On
Drain-Source
On-Resistance
Resistance
Forward Transconductance
VGS = 4.5 V
VGS = 2.5 V
VGS = 4.5 V
VGS = 2.5 V
ID(on)
D( )
rDs(on)
D ( )
20
2.5
2.5
1.5
1.5
V
A
0.2
0.4
0.29
0.4
0.25
0.5
0.34
0.5
gfs
2.2
VSD
0.8
1.2
0.8
1.2
V
Total Gate Charge
Qg
1400
2000
1900
2800
pC
Gate-Source Charge
Qgs
190
50
Gate-Drain Charge
Qgd
300
750
td(on)
17
25
8
13
tr
20
30
14
21
td(off)
55
85
21
30
tf
30
45
7
11
Diode Forward Voltage
2.2
W
S
Dynamic
nC
Switching
Turn-On Time
Turn Off Time
Turn-Off
ns
NS denotes parameter not specified.
Document Number: 73004
19-May-04
www.vishay.com
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