Specification Comparison Vishay Siliconix Si4430BDY vs. Si4430DY Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET SO-8 Identical Part Number Replacements: Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3 Si4430BDY-T1-E3 Replaces Si4430DY-T1 Summary of Performance: The Si4430BDY is the replacement to the original Si4430DY; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si4430BDY Si4430DY Unit Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS +20 +20 20 23 ID 16 19 IDM 60 60 IS 2.7 2.9 Continuous Drain Current TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25°C Power Dissipation TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient V A 3.0 3.5 PD 2.0 2.2 Tj & Tstg -55 to 150 -55 to 150 °C RthJA 41 35 °C/W W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Symbol Min VGS(th) 1.0 Si4430BDY Typ Max Min 3.0 1.7 Si4430DY Typ Max Unit Static Gate-Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance 1 IDSS VGS = 10 V VGS= 10 V VGS = 4.5 V ID(on) V +100 40 rDS(on) +100 nA 1 µA 30 A 0.0037 0.0045 0.004 NS 0.0048 0.006 0.0068 0.008 Forward Transconductance gfs 80 Diode Forward Voltage VSD 0.72 1.1 0.8 80 1.2 Qg Qgs Qgd Rg 24 10.5 7.5 1.1 36 36 15 12 2.2 55 Ω S V Dynamic Total Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 0.5 1.7 1.0 nC 3.7 Ω Switching Turn-On Time* Turn-Off Time* Source-Drain Reverse Recovery Time Document Number 74061 06-May-05 td(on) 20 30 20 30 tr 14 22 15 23 td(off) 60 90 105 160 tf 18 30 40 60 trr 35 50 50 80 ns www.vishay.com