Specification Comparison Vishay Siliconix Si7868ADP vs. Si7868DP Description: Package: Pin Out: N-Channel, 20-V (D-S) MOSFET PowerPAK® SO-8 Identical Part Number Replacements: Si7868ADP-T1-E3 Replaces Si7868DP-T1-E3 Si7868ADP-T1-E3 Replaces Si7868DP-T1 Summary of Performance: The Si7868ADP is the replacement to the original Si7868DP; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si7868ADP Si7868DP Unit Drain-Source Voltage VDS 20 20 Gate-Source Voltage VGS +16 +16 35 29 ID 28 25 Continuous Drain Current TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Avalanche Current L = 0.1 mH TA = 25°C Power Dissipation TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient IDM 70 60 IS 4.9 4.5 V A 30 50 5.4 5.4 PD 3.4 3.4 Tj & Tstg -55 to 150 -55 to 150 °C RthJA 23 23 °C/W IAS W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Symbol Min VGS(th) 0.6 Si7868ADP Typ Max Min 1.6 0.6 Si7868DP Typ Max Unit Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance +100 IGSS 1 IDSS VGS = 10 V VGS= 10 V VGS = 4.5 V ID(on) 30 rDS(on) 1.5 V +100 nA 1 µA 30 A 0.0018 0.00225 0.0018 0.00225 0.0021 0.00275 0.0022 0.00275 Forward Transconductance gfs 150 Diode Forward Voltage VSD 0.65 1.1 0.63 95 1.1 Qg Qgs Qgd Rg 46 9.5 8.8 1.1 70 50 12 11 1.2 75 1.8 80 Ω S V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 0.5 1.7 0.5 nC Ω Switching Turn-On Time* Turn-Off Time* Source-Drain Reverse Recovery Time td(on) 28 45 53 tr 120 180 49 75 td(off) 52 80 150 240 tf 12 20 75 110 trr 50 75 65 100 ns * Datasheet test conditions differ; RL = 1 Ω, ID = 10 A, Rg = 1 Ω on the Si7868ADP and RL = 10 Ω, ID = 1 A, Rg = 6 Ω on the Si7868DP. Document Number 74054 15-Apr-05 www.vishay.com