VISHAY SI1303DL

Si1303DL
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
ID (A)
0.430 @ VGS = - 4.5 V
- 0.72
0.480 @ VGS = - 3.6 V
- 0.68
0.700 @ VGS = - 2.5 V
- 0.56
SOT-323
SC-70 (3-LEADS)
G
1
3
LA
D
XX
YY
Marking Code
Lot Traceability
and Date Code
S
2
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
"12
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
V
- 0.67
- 0.72
ID
TA = 70_C
Pulsed Drain Current
- 0.58
IDM
Continuous Diode Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
Unit
TA = 70_C
Operating Junction and Storage Temperature Range
PD
- 0.54
A
- 2.5
- 0.28
- 0.24
0.34
0.29
0.22
0.19
TJ, Tstg
W
_C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
315
375
360
430
285
340
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71075
S-03721—Rev. C, 07-Apr-03
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1
Si1303DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = - 250 mA
- 0.6
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
"100
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 70_C
-5
VDS = - 5 V, VGS = - 4.5 V
nA
mA
- 2.5
A
VGS = - 4.5 V, ID = - 1 A
0.360
0.430
VGS = - 3.6 V, ID = - 0.7 A
0.400
0.480
VGS = - 2.5 V, ID = - 0.3 A
0.560
0.700
gfs
VDS = - 10 V, ID = - 1 A
1.7
VSD
IS = - 0.3 A, VGS = 0 V
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "12 V
rDS(on)
Voltagea
V
W
S
- 1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
9
15
tr
31
45
12.5
20
14
20
35
55
Rise Time
Turn-Off Delay Time
1.7
VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A
tf
Source-Drain Reverse Recovery Time
trr
0.38
nC
0.63
VDD = - 10 V, RL = 10 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
td(off)
Fall Time
2.2
IF = - 1 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
6
6
VGS = 4.5 V
4V
25_C
3.5 V
4
3V
3
2.5 V
2
TC = - 55_C
5
I D - Drain Current (A)
I D - Drain Current (A)
5
2V
1
4
3
125_C
2
1
1, 1.5 V
0
0
2
4
6
VDS - Drain-to-Source Voltage (V)
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2
8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
Document Number: 71075
S-03721—Rev. C, 07-Apr-03
Si1303DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
250
1.6
200
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
On-Resistance vs. Drain Current
2.0
VGS = 2.5 V
1.2
0.8
Ciss
150
100
VGS = 3.6 V
Coss
0.4
50
VGS = 4.5 V
Crss
0.0
0
0
1
2
3
4
5
6
0
4
ID - Drain Current (A)
Gate Charge
16
20
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 1 A
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
12
VDS - Drain-to-Source Voltage (V)
12
9
6
3
0
0
1
2
3
VGS = 4.5 V
ID = 1 A
1.2
0.8
0.4
0.0
- 50
4
- 25
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
25
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
2.5
r DS(on) - On-Resistance ( W )
TJ = 150_C
1
0.1
TJ = 25_C
0.01
0.001
0.0
0
TJ - Junction Temperature (_C)
10
I S - Source Current (A)
8
2.0
ID = 1 A
1.5
1.0
0.5
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 71075
S-03721—Rev. C, 07-Apr-03
1.5
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
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Si1303DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
20
16
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
12
TA = 25_C
8
0.0
4
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
10 -3
10 -2
10 -1
TJ - Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 360_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
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4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71075
S-03721—Rev. C, 07-Apr-03