Si4403DY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch – Game Stations – Notebooks – Desktops S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –6.5 –9 ID TA = 70_C Pulsed Drain Current –7 –5.0 IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD A –30 –2.1 –1.3 2.5 1.35 1.6 0.87 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 38 50 71 92 19 25 Unit _C/W C/W Notes a Surface Mounted on 1” x 1” FR4 Board. Document Number: 71683 S-04393—Rev. A, 13-Aug-01 www.vishay.com 1 Si4403DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VDS = 0 V, VGS = "8 V Diode Forward Voltagea "100 VDS = –16 V, VGS = 0 V –1 VDS = –16 V, VGS = 0 V, TJ = 70_C –10 VDS –5 V, VGS = –4.5 V rDS(on) Transconductancea V 20 nA m mA A VGS = –4.5 V, ID = –7.4 A 0.014 0.017 VGS = –2.5 V, ID = –6.3 A 0.018 0.023 VGS = –1.8 V, ID = –5.5 A 0.024 0.032 gfs VDS = –15 V, ID = –7.4 A 28 VSD IS = –1.3 A, VGS = 0 V –0.64 –1.1 30.5 50 W W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = –10 V, VGS = –5 V, ID = –7.4 A 5.3 nC Gate-Drain Charge Qgd 3.8 Turn-On Delay Time td(on) 30 50 tr 30 50 110 200 65 110 45 80 Rise Time Turn-Off Delay Time VDD = –10 V, RL = 15 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = –1.3 A, di/dt = 100 A/ms ns Notes a Pulse test; pulse width v 300 ms, duty cycle v 2%. b Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 2 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 1.5 V 12 6 18 12 TC = 125_C 6 25_C 0–1V 0 0 2 4 6 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 8 0 0.0 0.5 –55_C 1.0 1.5 2.0 VGS – Gate-to-Source Voltage (V) Document Number: 71683 S-04393—Rev. A, 13-Aug-01 Si4403DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 5000 0.060 4000 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) On-Resistance vs. Drain Current 0.075 0.045 VGS = 1.8 V 0.030 VGS = 2.5 V Ciss 3000 2000 Coss 1000 0.015 VGS = 4.5 V 0.000 Crss 0 0 6 12 18 24 30 0 4 ID – Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 7.4 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) 5 4 3 2 1 VGS = 4.5 V ID = 7.4 A 1.4 1.2 1.0 0.8 0 0 7 14 21 28 0.6 –50 35 –25 0 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.075 r DS(on) – On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ – Junction Temperature (_C) 30 I S – Source Current (A) 8 0.060 ID = 7.4 A 0.045 0.030 0.015 0.000 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71683 S-04393—Rev. A, 13-Aug-01 1.2 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si4403DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 40 0.4 32 ID = 250 mA Power (W) V GS(th) Variance (V) 0.2 0.0 24 16 –0.2 8 –0.4 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 TJ – Temperature (_C) 1 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 71_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71683 S-04393—Rev. A, 13-Aug-01