VISHAY SI1426DH

Si1426DH
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Thermally Enhanced SC-70 Package
D PWM Optimized
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.075 @ VGS = 10 V
3.6
APPLICATIONS
0.115 @ VGS = 4.5 V
2.9
D Boost Converter in Portable Devices
– Low Gate Charge (3 nC)
D Low Current Synchronous Rectifier
30
SOT-363
SC-70 (6-LEADS)
D
1
6
D
D
2
5
D
AC
G
3
4
XX
YY
Marking Code
Lot Traceability
and Date Code
S
Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
V
3.6
2.8
2.6
2.1
ID
TA = 85_C
Pulsed Drain Current
IDM
Continuous Diode Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
Unit
TA = 85_C
Operating Junction and Storage Temperature Range
PD
A
10
1.3
0.8
1.6
1.0
0.8
0.5
TJ, Tstg
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
60
80
100
125
34
45
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
www.vishay.com
1
Si1426DH
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VDS = VGS, ID = 250 mA
0.80
Typ
Max
Unit
2.5
V
"100
nA
Static
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Voltagea
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 85_C
5
VDS = 5 V, VGS = 10 V
m
mA
10
A
VGS = 10 V, ID = 3.6 A
0.061
0.075
VGS = 4.5 V, ID = 2.0 A
0.092
0.115
gfs
VDS = 10 V, ID = 3.6 A
5
VSD
IS = 1.3 A, VGS = 0 V
0.78
1.2
1.9
3
VDS = 15 V, VGS = 4.5 V, ID = 3.6 A
0.75
rDS(on)
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "20 V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.75
Turn-On Delay Time
td(on)
10
15
tr
12
18
15
22
9
15
40
70
Rise Time
Turn-Off Delay Time
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery
trr
IF = 1.4 A. di/dt = 100/ms
nC
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
10
VGS = 10 thru 5 V
4V
8
I D – Drain Current (A)
I D – Drain Current (A)
8
6
4
3V
2
6
4
TC = 125_C
2
25_C
–55_C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
www.vishay.com
2
3.5
4.0
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
Si1426DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
250
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
0.16
0.12
VGS = 4.5 V
0.08
VGS = 10 V
200
Ciss
150
Coss
100
Crss
0.04
50
0.00
0
0
2
4
6
8
10
0
6
ID – Drain Current (A)
Gate Charge
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
30
On-Resistance vs. Junction Temperature
8
6
4
2
VGS = 10 V
ID = 3.6 A
1.6
1.4
1.2
1.0
0.8
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.6
–50
4.0
–25
0
Qg – Total Gate Charge (nC)
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on) – On-Resistance ( W )
10
I S – Source Current (A)
24
1.8
VDS = 15 V
ID = 3.6 A
TJ = 150_C
1
TJ = 25_C
0.1
0.0
18
VDS – Drain-to-Source Voltage (V)
10
0
0.0
12
0.16
ID = 1 A
ID = 3.6 A
0.12
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
www.vishay.com
3
Si1426DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
30
0.2
25
ID = 250 mA
20
–0.0
Power (W)
V GS(th) Variance (V)
Threshold Voltage
0.4
–0.2
15
–0.4
10
–0.6
5
–0.8
–50
–25
0
25
50
75
100
125
150
0
0.001
0.01
1
0.1
TJ – Temperature (_C)
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA =100_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
www.vishay.com
4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71805
S-05803—Rev. A, 18-Feb-02