Si4480EY Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.2 0.040 @ VGS = 6.0 V 5.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4480EY Si4480EY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 80 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 70_C Operating Junction and Storage Temperature Range V 6.2 ID 5.2 IDM 40 IS 2.5 TA = 25_C Maximum Power Dissipationa, b Unit A 3 PD W 2.1 TJ, Tstg _C - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Lead Steady State Steady State RthJA RthJL Typical Maximum 40 50 85 100 20 24 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. t v 10 sec. Document Number: 71060 S-03951—Rev. B, 26-May-03 www.vishay.com 2-1 Si4480EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min 2 Typb Max Unit "100 nA Static VGS(th) VDS = VGS, ID = 250 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currena ID(on) Gate Threshold Voltage Drain Source On-State Drain-Source On State Resistancea Diode Forward Voltagea VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 55_C 20 VDS = 5 V, VGS = 10 V mA 20 A VGS = 10 V, ID = 6.2 A 0.026 0.035 VGS = 6.0 V, ID = 5.8 A 0.030 0.040 gfs VDS = 15 V, ID = 6.2 A 25 VSD IS = 2.1 A, VGS = 0 V rDS(on) DS( ) Forward Transconductancea V W S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time 30 VDS = 40 V, VGS = 10 V, ID = 6.2 A 50 9 nC 5.6 1.5 td(on) 12.5 25 tr 12.5 25 52 80 22 40 50 80 VDD = 40 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr W 4.0 IF = 2.1 A, di/dt = 100 A/ms ns Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 6 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 5V 24 16 8 24 16 TC = 125_C 8 25_C - 55_C 4V 0 0.0 0 0.8 1.6 2.4 3.2 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-2 4.0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 71060 S-03951—Rev. B, 26-May-03 Si4480EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2500 0.04 2000 VGS = 6 V C - Capacitance (pF) r DS(on)- On-Resistance ( W ) On-Resistance vs. Drain Current 0.05 0.03 VGS = 10 V 0.02 Ciss 1500 1000 Coss 500 0.01 Crss 0.00 0 0 10 20 30 40 0 10 ID - Drain Current (A) 30 40 50 60 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.4 VDS = 40 V ID = 6.0 A VGS = 10 V ID = 6 A 2.2 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 20 8 6 4 2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 6 12 18 24 0.6 - 50 30 - 25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 r DS(on)- On-Resistance ( W ) 40 I S - Source Current (A) 0 TJ = 175_C 10 TJ = 25_C 0.05 ID = 6.0 A 0.04 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71060 S-03951—Rev. B, 26-May-03 1.2 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 2-3 Si4480EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.5 50 40 ID = 250 mA Power (W) V GS(th) Variance (V) 0.0 - 0.5 30 20 - 1.0 10 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 0 10 -2 10 -1 1 TJ - Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.0001 10 -4 www.vishay.com 2-4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 100 Document Number: 71060 S-03951—Rev. B, 26-May-03