Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V 0.65 D Load Switching D PA Switch D Level Switch 25 D1 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code CB XX 2 kW 2 kW G1 YY S1 D2 G2 Lot Traceability and Date Code Part # Code Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 25 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V 0.73 0.64 0.53 0.46 ID TA = 85_C Pulsed Drain Current IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A 2 0.61 0.48 0.74 0.57 0.38 0.30 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71445 S-03929—Rev. B, 21-May-01 www.vishay.com 1 Si1904EDH New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = 250 mA 0.6 Typ Max Unit VDS = 0 V, VGS = "4.5 V "1 mA VDS = 0 V, VGS = "8 V "1 mA Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85_C 5 VDS = 5 V, VGS = 4.5 V rDS(on) V 2 m mA A VGS = 4.5 V, ID = 0.64 A 0.630 0.810 VGS = 2.5 V, ID = 0.2 A 0.830 1.04 gfs VDS = 10 V, ID = 0.64 A 1.1 VSD IS = 0.48 A, VGS = 0 V 0.80 1.2 0.66 1.0 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.26 Turn-On Delay Time td(on) 42 65 Rise Time VDS = 15 V, VGS = 4.5 V, ID = 0.64 A tr Turn-Off Delay Time VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time 0.14 tf nC 85 130 200 300 160 240 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 2.0 10,000 I GSS – Gate Current (mA) I GSS – Gate Current (mA) 1,000 1.6 1.2 0.8 100 10 TJ = 150_C 1 0.1 TJ = 25_C 0.01 0.4 0.001 0.0 0.0001 0 3 6 9 VGS – Gate-to-Source Voltage (V) www.vishay.com 2 12 0 3 6 9 12 VGS – Gate-to-Source Voltage (V) Document Number: 71445 S-03929—Rev. B, 21-May-01 Si1904EDH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 2.0 2.0 3V TC = –55_C VGS = 5 thru 3.5 V 25_C 1.5 2.5 V I D – Drain Current (A) I D – Drain Current (A) 1.5 1.0 2V 0.5 1V 125_C 1.0 0.5 1.5 V 0.0 0.0 0 1 2 3 4 0 1 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 4 Capacitance 80 1.6 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 3 VGS – Gate-to-Source Voltage (V) 2.0 1.2 VGS = 2.5 V VGS = 4.5 V 0.8 60 Ciss 40 Coss Crss 20 0.4 0.0 0.0 0 0.5 1.0 1.5 0 2.0 5 Gate Charge 20 25 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance (W) (Normalized) VDS = 15 V ID = 0.64 A 3 2 1 0 0.0 15 1.8 5 4 10 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) 2 1.6 VGS = 4.5 V ID = 0.64 A 1.4 1.2 1.0 0.8 0.2 0.4 0.6 Qg – Total Gate Charge (nC) Document Number: 71445 S-03929—Rev. B, 21-May-01 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si1904EDH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 2 TJ = 150_C r DS(on) – On-Resistance ( W ) I S – Source Current (A) 1 TJ = 25_C 1.6 ID = 0.2 A 1.2 ID = 0.64 A 0.8 0.4 0.0 0.1 0 0.6 0.3 0.9 1.2 0 1.5 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.2 5 ID = 250 mA 0.1 4 –0.0 3 Power (W) V GS(th) Variance (V) 1 –0.1 2 1 –0.2 –0.3 –50 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 170_C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71445 S-03929—Rev. B, 21-May-01 Si1904EDH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71445 S-03929—Rev. B, 21-May-01 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5