Si7820DN Vishay Siliconix New Product N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.250 @ VGS = 6 V 2.5 APPLICATIONS VDS (V) 200 D Primary Side Switch − Telecom Power Supplies − Distributed Power Architectures − Miniature Power Modules PowerPAK 1212-8 D S 3.30 mm 1 2 3.30 mm S 3 S 4 G G D 8 7 D 6 D 5 D S Ordering Information: Si7820DN-T1—E3 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Single Avalanche Current IS L = 0.1 0 1 mH Single Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 1.7 2.1 1.3 10 3.2 IAS A 1.3 3.5 EAS PD V 2.6 IDM Unit 0.6 mJ 3.8 1.5 2.0 0.8 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72581 S-32411—Rev. B, 24-Nov-03 www.vishay.com 1 Si7820DN Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 2 IGSS Typ Max Unit 4 V VDS = 0 V, VGS = "20 V "100 nA VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 10 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 2.6 A 0.200 0.240 VGS = 6 V, ID = 2.5 A 0.210 0.250 gfs VDS = 15 V, ID = 2.6 A 8 VSD IS = 3.2 A, VGS = 0 V 0.78 1.2 12.1 18 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 2.5 nC 4.1 2.3 3.9 td(on) 11 20 tr 12 20 30 45 17 30 65 100 Rise Time Turn-Off Delay Time VDS = 100 V, VGS = 10 V, ID = 2.6 A f = 1 MHz VDD = 100 V, RL = 100 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1 IF = 3.2 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 Transfer Characteristics 10 VGS = 10 thru 6 V 5V 8 I D − Drain Current (A) I D − Drain Current (A) 8 6 4 2 6 4 TC = 125_C 2 25_C 4V −55_C 0 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72581 S-32411—Rev. B, 24-Nov-03 Si7820DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.35 Capacitance 800 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 700 0.28 VGS = 6 V 0.21 VGS = 10 V 0.14 Ciss 600 500 400 300 200 0.07 Coss Crss 100 0.00 0 0 2 4 6 8 0 10 20 Gate Charge r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 6 4 2 0 0 2 4 6 8 10 VGS = 10 V ID = 2.6 A 2.0 1.6 1.2 0.8 0.4 −50 12 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.8 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 25 TJ − Junction Temperature (_C) 10 TJ = 150_C TJ = 25_C 1 0.0 80 On-Resistance vs. Junction Temperature 2.4 VDS = 100 V ID = 2.6 A 8 60 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 10 40 0.6 ID = 2.6 A 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72581 S-32411—Rev. B, 24-Nov-03 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7820DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-to-Ambient 0.6 50 0.4 ID = 250 mA 40 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 −0.4 30 20 −0.6 −0.8 10 −1.0 −1.2 −50 −25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ − Temperature (_C) 100 600 Safe Operating Area 1000 IDM Limited rDS(on) Limited 10 I D − Drain Current (A) 10 Time (sec) P(t) = 0.0001 1 P(t) = 0.001 P(t) = 0.01 ID(on) Limited 0.1 P(t) = 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse 0.01 BVDSS Limited 0.001 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72581 S-32411—Rev. B, 24-Nov-03 Si7820DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 Document Number: 72581 S-32411—Rev. B, 24-Nov-03 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 5