Si7409DN New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = - 4.5 V - 11 0.031 @ VGS = - 2.5 V - 8.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D VDS Optimized for Load Switch - 30 APPLICATIONS D Load Switch PowerPAKt 1212-8 S S 3.30 mm 3.30 mm 1 S 2 S 3 G G 4 D 8 D 7 D 6 D D 5 P-Channel MOSFET Bottom View Ordering Information: Si7409DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C V - 11 -7 - 7.9 -5 ID TA = 85_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A - 30 - 3.2 - 1.3 3.8 1.5 2.0 0.8 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72127 S-03372—Rev. A, 03-Mar-03 www.vishay.com 1 Si7409DN New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA - 0.6 Typ Max Unit - 1.5 V "100 nA Static Gate Threshold Voltage VDS = 0 V, VGS = "12 V Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea Diode Forward Voltagea -1 VDS = - 24 V, VGS = 0 V, TJ = 85_C -5 VDS v - 5 V, VGS = - 4.5 V rDS(on) DS( ) Forward Transconductancea VDS = - 24 V, VGS = 0 V mA - 30 A VGS = - 4.5 V, ID = - 11 A 0.0015 0.019 VGS = - 2.5 V, ID = - 8.5 A 0.025 0.031 gfs VDS = - 15 V, ID = - 11 A 40 VSD IS = - 3.2 A, VGS = 0 V - 0.7 - 1.2 25 40 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 11 A 5 Gate-Drain Charge Qgd 9 Turn-On Delay Time td(on) 30 Rise Time tr Turn-Off Delay Time VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = - 3.2 A, di/dt = 100 A/ms nC 45 50 75 115 175 75 115 60 90 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 2 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 1.5 V 15 10 5 20 15 10 TC = 125_C 5 25_C 1V - 55_C 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 72127 S-03372—Rev. A, 03-Mar-03 Si7409DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 4000 0.024 3200 VGS = 2.5 V C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.030 0.018 VGS = 4.5 V 0.012 Ciss 2400 1600 0.006 800 0.000 0 Coss Crss 0 5 10 15 20 25 30 0 5 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 15 V ID = 11 A 4 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 10 3 2 1 0 0 5 10 15 20 25 VGS = 4.5 V ID = 11 A 1.4 1.2 1.0 0.8 0.6 - 50 30 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.12 30 0.10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 1 0.1 TJ = 25_C 0.01 0.001 0.0 ID = 11 A 0.08 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72127 S-03372—Rev. A, 03-Mar-03 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7409DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.6 50 ID = 250 mA 40 0.2 Power (W) V GS(th) Variance (V) 0.4 - 0.0 30 20 - 0.2 TA = 25_C Single Pulse 10 - 0.4 - 0.6 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (_C) 10 100 600 Time (sec) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited IDM Limited 100 ms, 10 ms I D - Drain Current (A) 10 1 ms 10 ms 1 ID(on) Limited 100 ms 1s 0.1 TA = 25_C Single Pulse 10 s dc, 100 s BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72127 S-03372—Rev. A, 03-Mar-03 Si7409DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72127 S-03372—Rev. A, 03-Mar-03 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 www.vishay.com 5