Si3440DV Vishay Siliconix New Product N-Channel 150-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V 1.4 APPLICATIONS D Primary Side Switch for Low Power DC/DC Converters (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Ordering Information: Si3440DV-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Single Avalanche Current Single Avalanche Energy (Duty Cycle v1%) L = 0.1 0 1 mH Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range 1.2 1.1 0.8 6 IAS 4 EAS 0.8 IS PD V 1.5 IDM A mJ 1.7 1.0 2.0 1.14 1.0 0.59 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72380 S-32412—Rev. B, 24-Nov-03 www.vishay.com 1 Si3440DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 2 IGSS Typ Max Unit 4 V VDS = 0 V, VGS = "20 V "100 nA VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 85_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V Diode Forward Voltagea A VGS = 10 V, ID = 1.5 A 0.310 0.375 VGS = 6.0 V, ID = 1.4 A 0.330 0.400 gfs VDS = 15 V, ID = 1.5 A 4.1 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 5.4 8 rDS(on) Forward Transconductancea 4 mA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 75 V, VGS = 10 V, ID = 1.5 A 1.1 nC 1.9 f = 1 MHz 9 15 td(on) 8 15 tr 10 15 20 30 15 25 40 60 VDD = 75 V, RL = 75 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 4 IF = 1.7 A, di/dt = 100 A/ms W ns ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 4.0 4.0 VGS = 10 thru 5 V 3.5 3.5 3.0 I D − Drain Current (A) I D − Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.0 0.0 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.5 1.5 1.0 TC = 125_C 0.5 3V 0.5 2.0 25_C 4V 0.5 2.5 4.0 −55_C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS − Gate-to-Source Voltage (V) Document Number: 72380 S-32412—Rev. B, 24-Nov-03 Si3440DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 320 0.4 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.5 VGS = 6.0 V 0.3 VGS = 10 V 0.2 Ciss 240 160 80 0.1 0.0 Crss 0 0 1 2 3 0 4 10 20 ID − Drain Current (A) 30 40 50 60 70 80 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.5 VDS = 75 V ID = 1.5 A r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) Coss 8 6 4 2 0 0 1 2 3 4 5 VGS = 10 V ID = 1.5 A 2.0 1.5 1.0 0.5 −50 6 −25 0 Qg − Total Gate Charge (nC) 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 10 TJ = 150_C TJ = 25_C 1 0.0 25 0.8 ID = 1.5 A 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72380 S-32412—Rev. B, 24-Nov-03 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3440DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.8 30 25 ID = 250 mA 20 0.0 Power (W) V GS(th) Variance (V) 0.4 −0.4 15 10 −0.8 5 −1.2 −50 −25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ − Temperature (_C) 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited P(t) = 0.0001 rDS(on) Limited I D − Drain Current (A) 10 P(t) = 0.001 1 0.1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72380 S-32412—Rev. B, 24-Nov-03 Si3440DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72380 S-32412—Rev. B, 24-Nov-03 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5