Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Unit: mm VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C Tj Storage temperature Tstg 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 0.8±0.1 35 PC Junction temperature 2.0 Unit: mm 60 Emitter to base voltage Collector power TC=25°C 10.5min. V 80 1.3 5.08±0.5 150 ˚C –55 to +150 ˚C Symbol 2SD1260 current 2SD1260A Collector cutoff 2SD1260 current 2SD1260A ICBO ICEO IEBO Emitter cutoff current Collector to emitter 2SD1260 voltage 2SD1260A Forward current transfer ratio Conditions min 1 VCE = 30V, IB = 0 2 VCE = 40V, IB = 0 2 VEB = 5V, IC = 0 2 60 IC = 30mA, IB = 0 hFE1 VCE = 4V, IC = 1A 1000 VCE = 4V, IC = 2A 1000 * Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Internal Connection Rank classification hFE2 R 2.5 VCC = 50V Q P 1000 to 2500 2000 to 5000 4000 to 10000 mA mA mA 10000 2.8 IC = 2A, IB1 = 8mA, IB2 = –8mA, Unit V 80 VCE = 4V, IC = 2A Rank max 1 VCEO hFE2 typ VCE = 60V, IE = 0 VBE FE2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VCE = 80V, IB = 0 Base to emitter voltage *h 2 (TC=25˚C) Parameter Collector cutoff 0 to 0.4 1.1 max. 1 ■ Electrical Characteristics R0.5 R0.5 2.54±0.3 W 14.7±0.5 emitter voltage 2SD1260A 1:Base 2:Collector 3:Emitter N Type Package 3 +0.4 2SD1260 2 3.0–0.2 Collector to 60 VCBO 1 Unit +0 2SD1260A 5.08±0.5 1.5–0.4 2SD1260 base voltage Ratings 0.5max. 2.54±0.3 (TC=25˚C) Symbol Collector to 0.8±0.1 10.0±0.3 Parameter 1.1max. 4.4±0.5 ■ Absolute Maximum Ratings 1.5max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 1.5±0.1 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 V V 20 MHz 0.5 µs 4 µs 1 µs C B E 1 Power Transistors 2SD1260, 2SD1260A PC — Ta IC — VCE 35 30 25 20 15 10 10 TC=25˚C VCE=4V 4 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (1) (PC=1.3W) IC — VBE 5 Collector current IC (A) Collector power dissipation PC (W) 40 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 3 2 0.4mA 0.2mA 1 8 25˚C TC=100˚C –25˚C 1.6 2.4 6 4 2 (2) 5 (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 1 2 4 5 Cob — VCB 25˚C 3 TC=–25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 104 1000 TC=100˚C 103 25˚C –25˚C 102 0.1 0.3 1 3 ICP t=10ms 3 IC 1ms 1 300ms 0.3 0.03 0.01 1 3 10 30 2SD1260A 2SD1260 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 300 1 0.1 10 Collector current IC (A) Area of safe operation (ASO) 30 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE VCE=4V 10 3.2 10000 IC/IB=250 30 1 0.8 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 105 100 Collector current IC (A) 2 6 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 3 1 Time t (s) 10 102 103 104