Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB930 and 2SB930A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A 0.8±0.1 Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ˚C –55 to +150 ˚C Symbol 2SD1253 current 2SD1253A Collector cutoff 2SD1253 current 2SD1253A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SD1253 voltage 2SD1253A Forward current transfer ratio Conditions 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 min typ max 400 VCE = 80V, VBE = 0 400 VCE = 30V, IB = 0 700 VCE = 60V, IB = 0 700 VEB = 5V, IC = 0 1 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 40 15 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.4A Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 1 VCE = 60V, VBE = 0 Base to emitter voltage *h 5.08±0.5 (TC=25˚C) Parameter Collector cutoff 0 to 0.4 1.1 max. W 1.3 ■ Electrical Characteristics R0.5 R0.5 2.54±0.3 150 14.7±0.5 V 80 +0.4 VCEO Unit: mm 8.5±0.2 +0 2SD1253 emitter voltage 2SD1253A V 80 1.5–0.4 Collector to 60 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 10.0±0.3 2SD1253A 2 Unit 2.0 2SD1253 base voltage Ratings 4.4±0.5 Symbol Collector to 0.5max. 5.08±0.5 (TC=25˚C) 1 Parameter 1.1max. 3.0–0.2 ■ Absolute Maximum Ratings 1.5max. 4.4±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V Unit µA µA mA V 80 250 2 1.5 V V 20 MHz 0.4 µs 1.2 µs 0.5 µs Rank classification Rank R Q P hFE1 40 to 90 70 to 150 120 to 250 1 Power Transistors 2SD1253, 2SD1253A PC — Ta IC — VCE IC — VBE 6 (1) 40 30 20 8 TC=25˚C 10 VCE=4V 7 IB=150mA 5 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 100mA 4 80mA 60mA 40mA 3 30mA 2 20mA 10mA 25˚C 6 TC=100˚C –25˚C 0.4 1.2 5 4 3 2 1 (2) 1 5mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 12 16 3000 Transition frequency fT (MHz) TC=100˚C 1 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 t=10ms IC 1ms 300ms 1 0.3 0.01 1 3 10 30 2SD1253A 2SD1253 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 3 30 1 0.01 0.03 10 103 10 ICP 100 Collector current IC (A) Area of safe operation (ASO) 30 300 3 1 0.01 0.03 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 2.4 VCE=10V f=1MHz TC=25˚C 3000 1000 3 2.0 fT — IC VCE=4V Forward current transfer ratio hFE 10 1.6 10000 IC/IB=10 30 0.8 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 100 Collector current IC (A) 2 20 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 8 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10