Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit: mm 7.0±0.3 0.8±0.2 1.0±0.2 3.5±0.2 2.0±0.2 20 VCEO emitter voltage 2SD1752A 7.0±0.3 3.0±0.2 VEBO 5 V Peak collector current ICP 20 A Collector current IC 10 A 2.5 0.75±0.1 dissipation Ta=25°C Junction temperature W 1.3 Tj 150 1 Tstg –55 to +150 3 ˚C ■ Electrical Characteristics Conditions Symbol 2SD1752 current 2SD1752A Emitter cutoff current ICBO IEBO Collector to emitter 2SD1752 voltage 2SD1752A Forward current transfer ratio 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Collector cutoff ˚C 0.9±0.1 0 to 0.15 2 2.3±0.2 Storage temperature 0.5 max. 1.1±0.1 15 PC 0 to 0.15 V 40 Emitter to base voltage Collector power TC=25°C Unit: mm 1.0 2SD1752 Unit V 50 1:Base 2:Collector 3:Emitter I Type Package 3 2.5±0.2 Collector to 40 VCBO 2 1.0 2SD1752A Ratings 1 2.5±0.2 2SD1752 base voltage +0.3 (TC=25˚C) Symbol Collector to 2.3±0.2 4.6±0.4 ■ Absolute Maximum Ratings Parameter 0.85±0.1 0.4±0.1 1.0 max. ● 10.0 –0. ● 1.1±0.1 0.75±0.1 7.2±0.3 ● Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.2±0.3 ● 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 min 50 VCB = 50V, IE = 0 50 VEB = 5V, IC = 0 50 20 IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 VCE = 2V, IC = 3A 90 hFE2 max VCB = 40V, IE = 0 VCEO * typ Unit µA µA V 40 260 Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 0.33A Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 0.33A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz 120 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 200 pF Turn-on time ton 0.3 µs Storage time tstg 0.4 µs Fall time tf 0.1 µs *h FE2 IC = 3A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 20V 0.6 1.5 V V Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1752, 2SD1752A PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) (1) 15 Collector to emitter saturation voltage VCE(sat) (V) 10 IB=100mA Collector current IC (A) Collector power dissipation PC (W) 20 10 5 90mA 80mA 8 70mA 60mA 50mA 6 40mA 4 30mA 20mA 2 10mA (2) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 6 3 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=20 10 0.3 1 3 10 30 Collector current IC (A) hFE — IC fT — IC IC/IB=20 25˚C 1 –25˚C TC=100˚C 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.3 Collector current IC (A) ton 0.3 tstg 0.1 tf 1ms 3 300ms 1 0.3 0.1 0.01 0.01 2 3 4 Collector current IC (A) 2 t=10ms 0.03 0.03 5 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) IC 10 2SD1752 1 1 30 Non repetitive pulse TC=25˚C 30 ICP 3 0 10 Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 10 3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=30(IB1=–IB2) VCC=20V TC=25˚C 30 1 Collector current IC (A) ton, tstg, tf — IC 100 300 0.3 1 0.1 30 Transition frequency fT (MHz) 3 VCE=10V f=1MHz TC=25˚C VCE=2V 1000 2SD1752A 10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1000 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD1752, 2SD1752A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3