PANASONIC 2SD1611

Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
●
1.5±0.1
10.0±0.3
1.0±0.1
1.1max.
2.0
1.5max.
High foward current transfer ratio hFE
High collector to base voltage VCBO
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.5min.
●
Unit: mm
6.0±0.5
■ Features
●
3.4±0.3
8.5±0.2
For power amplification
0.8±0.1
0.5max.
2.54±0.3
5.08±0.5
1
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
10
A
Collector current
IC
6
A
dissipation
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
1.3
R0.5
R0.5
0 to 0.4
2.54±0.3
W
1.1 max.
5.08±0.5
150
˚C
–55 to +150
˚C
1
2
1:Base
2:Collector
3:Emitter
N Type Package (DS)
3
(TC=25˚C)
Symbol
Conditions
Collector cutoff current
ICBO
Collector to emitter voltage
VCEO(sus)
IC = 2A, L = 10mH
Emitter to base voltage
VEBO
IE = 0.1A, IC = 0
min
typ
VCB = 350V, IE = 0
Forward current transfer ratio
hFE
VCE = 2V, IC = 2A
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.06A
Base to emitter saturation voltage
VBE(sat)
IC = 3A, IB = 0.06A
Transition frequency
fT
VCE = 10V, IC = 1A, f = 1MHz
Internal Connection
1.0±0.1
0.8±0.1
40
PC
6.0±0.3
14.7±0.5
V
+0.4
500
3.0–0.2
VCBO
3.4±0.3
4.4±0.5
Collector to base voltage
Unit: mm
8.5±0.2
+0
Unit
1.5–0.4
Ratings
10.0±0.3
Symbol
2.0
Parameter
Collector power TC=25°C
1:Base
2:Collector
3:Emitter
N Type Package
3
(TC=25˚C)
4.4±0.5
■ Absolute Maximum Ratings
2
max
Unit
100
µA
400
V
5
V
500
1.5
2.5
15
V
V
MHz
C
B
E
1
Power Transistors
2SD1611
PC — Ta
IC — VCE
60
50
(1)
40
30
20
IB=8mA
4
3
4.0mA
3.5mA
3.0mA
2.5mA
2
2.0mA
1
1.5mA
10
(3)
(2)
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
3
4
5
VBE(sat) — IC
100˚C
25˚C
0.3
0.1
0.03
Collector output capacitance Cob (pF)
TC=–25˚C
104
103
TC=100˚C
102
25˚C
–25˚C
0.3
1
3
10
0.01 0.03
10
Collector current IC (A)
0.1
0.3
1
3
Area of safe operation (ASO)
ICP
t=10µs
IC
1ms
300ms
1
0.3
0.1
0.03
0.01
1
3
10
30
100
0.1
0.03
0.01
0.01 0.03
300
Collector to emitter voltage VCE
1000
(V)
0.1
0.3
1
3
10
IE=0
f=1MHz
TC=25˚C
103
102
10
0.3
1
3
10
30
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
3
–25˚C
0.3
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
100
Collector to base voltage VCB (V)
103
10
1
1
0.1
10
Collector current IC (A)
100
30
25˚C
TC=100˚C
Cob — VCB
VCE=2V
Forward current transfer ratio hFE
10
0.1
3
104
IC/IB=50
1
10
hFE — IC
30
3
IC/IB=50
30
Collector current IC (A)
105
0.01
0.01 0.03
Collector current IC (A)
6
100
Collector to emitter voltage VCE (V)
100
2
Collector to emitter saturation voltage VCE(sat) (V)
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
70
0
Base to emitter saturation voltage VBE(sat) (V)
VCE(sat) — IC
5
Collector current IC (A)
Collector power dissipation PC (W)
80
1
Time t (s)
10
102
103
104