Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)b 0.082 @ VGS = −10 V −3.0 0.130 @ VGS = −4.5 V −2.4 APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2319DS-T1 Si2319DS-T1—E3 (Lead Free) Top View Si2319DS (C9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS −40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)b TA= 25_C TA= 70_C Pulsed Drain Currenta ID Continuous Source Current (Diode Conduction)b IS TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range PD V −3.0 −2.3 −2.4 −1.85 IDM A −12 −1.0 −0.62 1.25 0.75 0.8 0.48 TJ, Tstg Unit W −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72315 S-40844—Rev. B, 03-May-04 www.vishay.com 1 Si2319DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = −250 mA −40 VGS(th) VDS = VGS, ID = −250 mA −1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage rDS(on) DS( ) −3.0 "100 VDS = −40 V, VGS = 0 V −1 VDS = −40 V, VGS = 0 V, TJ = 55_C −10 VDS v −5 V, VGS = −10 V −6 V nA mA A VGS = −10 V, ID = −3.0 A 0.065 0.082 VGS = −4.5 V, ID = −2.4 A 0.100 0.130 gfs VDS = −5 V, ID = −3.0 A 7.0 VSD IS = −1.25 A, VGS = 0 V −0.8 −1.2 11.3 17 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = −20 V, VGS = −10 V ID ^ −3 A 1.7 nC 3.3 470 VDS = −20 V, VGS = 0, f = 1 MHz 85 pF 65 Switchingc Turn On Time Turn-On Turn-Off Time td(on) tr td(off) VDD = −20 V, RL =20 W ID ^ −1.0 −1 0 A A, VGEN = −4.5 −4 5 V Rg = 6 W tf 7 15 15 25 25 40 25 40 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 www.vishay.com 2 Document Number: 72315 S-40844—Rev. B, 03-May-04 Si2319DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 10 I D − Drain Current (A) I D − Drain Current (A) 16 12 4V 8 4 Transfer Characteristics 12 1 V, 2 V 8 6 4 TC = 125_C 25_C 2 3V −55_C 0 0 2 4 6 8 0 0.0 10 0.5 VDS − Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 35 40 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 800 0.20 0.12 C − Capacitance (pF) r DS(on)− On-Resistance ( W ) 700 0.16 VGS = 4.5 V 0.08 VGS = 10 V 0.04 600 Ciss 500 400 300 200 Coss 100 0.00 Crss 0 0 2 4 6 8 10 0 12 5 Gate Charge 1.8 VDS = 20 V ID = 3 A 1.6 8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 15 20 25 30 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 10 10 6 4 2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 1.4 1.2 1.0 0.8 0 0 2 4 6 8 Qg − Total Gate Charge (nC) Document Number: 72315 S-40844—Rev. B, 03-May-04 10 12 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si2319DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.7 r DS(on)− On-Resistance ( W ) 10 I S − Source Current (A) On-Resistance vs. Gate-to-Source Voltage 0.8 TJ = 150_C 1 TJ = 25_C 0.6 0.5 0.4 ID = 3 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD − Source-to-Drain Voltage (V) 8 10 Single Pulse Power 10 0.4 8 Power (W) V GS(th) Variance (V) Threshold Voltage ID = 250 mA 0.0 −0.2 −0.4 −50 6 VGS − Gate-to-Source Voltage (V) 0.6 0.2 4 6 4 TA = 25_C Single Pulse 2 0 −25 0 25 50 75 100 125 0.01 150 0.1 TJ − Temperature (_C) 1 10 100 1000 Time (sec) 100.0 Safe Operating Area, Junction-to-Case Limited by rDS(on) I D − Drain Current (A) 10.0 10 ms 100 ms 1.0 1 ms 10 ms 0.1 100 ms TA = 25_C Single Pulse dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72315 S-40844—Rev. B, 03-May-04 Si2319DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72315 S-40844—Rev. B, 03-May-04 www.vishay.com 5