1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ∗This product is available only outside of Japan. !External dimensions (Units : mm) !Applications High-speed switching !Features 1) Glass sealed envelope. (GSD) 2) High speed. 3) High reliability. CATHODE BAND (BLACK) Type No. φ 0.5±0.1 C A 29±1 !Construction Silicon epitaxial planar 3.8±0.2 φ 1.8±0.2 29±1 ROHM : GSD EIAJ : − JEDEC : DO-35 !Absolute maximum ratings (Ta = 25°C) Type VRM (V) VR (V) IFM (mA) IO (mA) IFSM 1µs (A) IF (mA) P (mW) Tj (°C) Topr (°C) Tstg (°C) 1N4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200 1N4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200 1N4448 (1N914B) 100 75 450 150 200 2 500 200 −65~+200 −65~+200 !Electrical characteristics (Ta = 25°C) VF (V) Type @ @ 0.1mA 0.25mA BV (V) Min. @ @ @ @ @ @ @ 1mA 2mA 5mA 10mA 20mA 30mA 50mA @ @ 100mA 200mA 250mA 1N4148 1.0 0.66 0.54 0.76 0.82 0.87 1N4150 0.74 0.62 1N4448 (IN914B) 0.86 0.92 0.62 0.72 @ 1.0 The upper figure is the minimum VF and the lower figure is the maximum VF value. 1.0 @ 5µA @ 100µA 75 100 − 50 − 100 IR (µA) Max. @25°C VR (V) 0.025 20 5.0 75 0.1 50 0.025 20 5.0 75 Cr (pF) trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100Ω @150°C 50.0 20 4 4 100.0 50 2.5 4 50.0 20 4 4 1N4148 / 1N4150 / 1N4448 / 1N914B Diodes !Electrical characteristic curves (Ta = 25°C) REVERSE CURRENT : IR (nA) 20 10 5 2 0.2 0 25°C Ta=75°C Ta=25°C Ta=−25 °C 1 0.5 100°C 3000 Ta=1 FORWARD CURRENT : IF (mA) 50 1000 70°C 300 50°C 100 30 Ta=25°C 10 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 FORWARD VOLTAGE : VF (V) 40 60 80 100 120 Fig. 2 Reverse characteristics 3 100 SURGE CURRENT : Isurge (A) VR=6V Irr=1/10IR 2 1 PULSE Single pulse 50 20 10 5 2 0 0 10 20 1 0.1 30 FORWARD CURRENT : IF (mA) 10 5Ω 50Ω SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0.1IR 0 IR 1000 10000 Fig. 5 Surge current characteristics D.U.T. PULSE GENERATOR OUTPUT 50Ω 100 PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristics 0.01µF 1 Fig. 6 Reverse recovery time (trr) measurement circuit 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics REVERSE RECOVERY TIME : trr (ns) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 Fig. 3 Capacitance between terminals characteristics