2N2894DCSM DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) 3 1 4 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 A 6 5 FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 0.23 rad. (0.009) • SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • SCREENING OPTIONS AVAILABLE 6.22 ± 0.13 (0.245 ± 0.005) A= 1.27 ± 0.13 (0.05 ± 0.005) • HIGH SPEED, LOW SATURATION SWITCH LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 APPLICATIONS: PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 Hermetically sealed dual surface mount version of the popular 2N2894 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -12V VCEO Collector – Emitter Voltage -12V VEBO Emitter – Base Voltage -4V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C TSTG , TJ Semelab plc. Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 360mW 2.06mW / °C 1.2W 6.85mW / °C –65 to +200°C Prelim. 8/99 2N2894DCSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CBO* Collector – Base Breakdown Voltage IC = 10mA IE = 0 – 12 V(BR)CEO Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 – 12 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IC = 0 –4 ICBO Collector Cut-off Current VCB = –6V Tamb = 125°C – 10 ICES Collector Cut-off Current VBE = 0 VCE = –6V – 80 IC = –10mA IB = –1mA –0.15 IC = –30mA IB = –3mA –0.20 IC = –100mA IB = –10mA – 0.50 IC = –10mA IB = –1mA –0.78 –0.98 IC = –30mA IB = –3mA –0.85 –1.2. IC = –100mA IB = –10mA IC = –10mA VCE = –0.3V 30 IC = –30mA VCE = –0.5V 40 IC = –100mA VCE = –1V 25 IC = –30mA VCE = –0.5V VCE(sat) VBE(sat) hFE Collector – Emitter Saturation Voltage Base – Emitter On Voltage DC Current Gain Tamb = 125°C fT Current Gain Bandwidth Product Cebo Emitter – Base – Capacitance Ccbo Collector – Base – Capacitance ton Turn on Time toff Turn off Time VCE = –10V f = 100MHz IC = –30mA VEB = –5V IC = 0 f = 1MHz VCB = –5V IC = 0 f = 1MHz IC = –30mA VCE = –2V IB2 = –1.5mA IC = –30mA VCE = –2V IB1 = IB2= –1.5mA V nA V V –1.7 150 –— 17 400 MHz 6 pF 6 pF 60 ns 9 ns * Pulse Test: tp £ 300ms, d £ 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 8/99