SEME 2N3209CSM LAB HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad. (0.012) 3 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.31 rad. (0.012) A = 1.02 ± 0.10 (0.04 ± 0.004) • CECC SCREENING OPTIONS A 1.40 (0.055) max. • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING Underside View APPLICATIONS: PAD 1 PAD 2 PAD 3 For high reliablitity general purpose applications requiring small size and low weight devices. Base Emitter Collector SOT23 CERAMIC (CSM) LCC1 PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tj Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. –20V –20V –4V –200mA 300mW 2.20mW / °C 420°C / W 200°C –55 to 200°C Prelim. 12/93 SEME 2N3209CSM LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA -20 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10µA -20 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10µA IC = 0 -4 V VCE = 10V VBE = 0 VCE = 10V VBE = 0 ICES* Collector Cut-off Current TC = 125°C VCE(sat)* VBE(sat)* hFE* Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain 80 nA 10 µA IC = 10mA IB = 1mA 0.15 IC = 30mA IB = 3mA 0.20 IC = 100mA IB = 10mA 0.60 IC = 10mA IB = 1mA 0.78 0.98 IC = 30mA IB = 3mA 0.85 1.2 IC = 100mA IB = 10mA IC = 10mA VCE = 0.3V 25 IC = 30mA VCE = 0.5V 30 IC = 100mA VCE = 1V 15 VCE = 0.5V 12 Tamb = –55°C IC = 30mA V V 1.7 120 — * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 30mA VCE = 10V f = 100MHz 400 MHz CEBO Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 6.0 pF CCBO Input Capacitance VCB = 5V IE = 0 f = 1.0MHz 5.0 pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ton Turn-on Time toff Turn-off Time Semelab plc. Test Conditions VCC = 2V IC = 30mA VCC = 2V IB1 = 1.5mA IC = 30mA IB1 = IB2 = 1.5mA Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Min. Typ. Max. Unit 60 ns 90 ns Prelim. 12/93