SANKEN 2SD2017

2SD2017
Silicon NPN Triple Diffused Planar Transistor
VCEO
250
V
IEBO
VEBO
20
V
V(BR)CEO
IC
6
A
hFE
VCE=2V, IC=2A
2000min
Conditions
Unit
VCB=300V
100max
µA
VEB=20V
10max
mA
IC=25mA
250min
10.1±0.2
V
IB
1
A
VCE(sat)
IC=2A, IB=2mA
1.5max
PC
35(Tc=25°C)
W
VBE(sat)
IC=2A, IB=2mA
2.0max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
20typ
MHz
°C
COB
VCB=10V, f=1MHz
65typ
pF
3.9
V
1.35±0.15
1.35±0.15
–5
1mA
3
I B = 0 .4
2
mA
1
0
0
1
2
3
4
5
2
I C =8A
1
I C =3A
0
0.2 0.5
1
5
10
50 100
(V C E =2V)
10000
5000
Typ
D C Cur r ent Gai n h F E
DC Curr ent Gain h F E
0
1
1000
500
100
1
1000
125
˚C
25
˚C
–3
0˚C
500
100
50
30
0.03
5 6
0.1
θ j-a – t Characteristics
0.5
1
56
5
1
0.5
0.3
1
5
10
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
10000
0.5
0
500 1000
Base Current I B (mA)
(V C E =2V)
0.1
2
1
6
h FE – I C Characteristics (Typical)
50
30
0.03
3
I C =1A
Collector-Emitter Voltage V C E (V)
5000
4
e Te
mp)
(Case
Temp
)
4
5
–30˚C
2mA
(Cas
A
25˚C
4m
6
p)
Collector Current I C (A)
A
(V C E =2V)
3
Tem
8m
I C – V BE Temperature Characteristics (Typical)
se
A
5
3.0typ
˚C
4
m
20
Collector-Emitter Saturation Voltage V C E (s at) (V )
6
A
16.0typ
B C E
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
0m
0.6typ
–10
5
Weight : Approx 2.0g
a. Type No.
b. Lot No.
tf
(µs)
(Ca
10
tstg
(µs)
125
2
ton
(µs)
IB2
(mA)
IB1
(mA)
VBB2
(V)
Collector Current I C (A)
50
100
VBB1
(V)
2.4±0.2
2.2±0.2
θ j- a ( ˚ C/W)
IC
(A)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
Transient Thermal Resistance
RL
(Ω)
ø3.3±0.2
a
b
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
4.2±0.2
2.8 c0.5
4.0±0.2
ICBO
0.8±0.2
V
2SD2017
±0.2
Unit
300
Symbol
External Dimensions FM20(TO220F)
(Ta=25°C)
VCBO
–55 to +150
E
8.4±0.2
■Electrical Characteristics
2SD2017
Tstg
( 4k Ω)
Application : Driver for Solenoid, Relay and Motor and General Purpose
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
C
B
13.0min
Darlington
Symbol
Equivalent
circuit
50
100
500 1000
Time t(ms)
P c – T a Derating
Safe Operating Area (Single Pulse)
(V C E =12V)
30
35
20
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10
C)
1
si
nk
Without Heatsink
Natural Cooling
0.05
150x150x2
at
0.1
he
0.5
20
ite
Maximu m Power Dissi pation P C (W)
25
s
fin
Collector Curr ent I C (A)
C=
In
Cut- off F req uency f T ( MH Z )
(T
ith
10
C
30
W
20
D.
s
5
m
1m
10
Typ
100x100x2
10
50x50x2
Without Heatsink
0
–0.02 –0.05 –0.1
–0.5
–1
Emitter Current I E (A)
142
–5 –6
0.02
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
300
2
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150