2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V(BR)CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz °C COB VCB=10V, f=1MHz 65typ pF 3.9 V 1.35±0.15 1.35±0.15 –5 1mA 3 I B = 0 .4 2 mA 1 0 0 1 2 3 4 5 2 I C =8A 1 I C =3A 0 0.2 0.5 1 5 10 50 100 (V C E =2V) 10000 5000 Typ D C Cur r ent Gai n h F E DC Curr ent Gain h F E 0 1 1000 500 100 1 1000 125 ˚C 25 ˚C –3 0˚C 500 100 50 30 0.03 5 6 0.1 θ j-a – t Characteristics 0.5 1 56 5 1 0.5 0.3 1 5 10 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 10000 0.5 0 500 1000 Base Current I B (mA) (V C E =2V) 0.1 2 1 6 h FE – I C Characteristics (Typical) 50 30 0.03 3 I C =1A Collector-Emitter Voltage V C E (V) 5000 4 e Te mp) (Case Temp ) 4 5 –30˚C 2mA (Cas A 25˚C 4m 6 p) Collector Current I C (A) A (V C E =2V) 3 Tem 8m I C – V BE Temperature Characteristics (Typical) se A 5 3.0typ ˚C 4 m 20 Collector-Emitter Saturation Voltage V C E (s at) (V ) 6 A 16.0typ B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 0m 0.6typ –10 5 Weight : Approx 2.0g a. Type No. b. Lot No. tf (µs) (Ca 10 tstg (µs) 125 2 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) Collector Current I C (A) 50 100 VBB1 (V) 2.4±0.2 2.2±0.2 θ j- a ( ˚ C/W) IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 Transient Thermal Resistance RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 ICBO 0.8±0.2 V 2SD2017 ±0.2 Unit 300 Symbol External Dimensions FM20(TO220F) (Ta=25°C) VCBO –55 to +150 E 8.4±0.2 ■Electrical Characteristics 2SD2017 Tstg ( 4k Ω) Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 50 100 500 1000 Time t(ms) P c – T a Derating Safe Operating Area (Single Pulse) (V C E =12V) 30 35 20 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 C) 1 si nk Without Heatsink Natural Cooling 0.05 150x150x2 at 0.1 he 0.5 20 ite Maximu m Power Dissi pation P C (W) 25 s fin Collector Curr ent I C (A) C= In Cut- off F req uency f T ( MH Z ) (T ith 10 C 30 W 20 D. s 5 m 1m 10 Typ 100x100x2 10 50x50x2 Without Heatsink 0 –0.02 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) 142 –5 –6 0.02 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 300 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150