SANKEN 2SD2082

2SD2082
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382)
Application : Driver for Solenoid, Motor and General Purpose
Conditions
V
ICBO
VCB=120V
10max
µA
VCEO
120
V
IEBO
VEB=6V
10max
mA
6
V
V(BR)CEO
16(Pulse26)
A
hFE
IC=10mA
120min
VCE=4V, IC=8A
2000min
15.6±0.2
V
23.0±0.3
V
1
A
VCE(sat)
IC=8A, IB=16mA
1.5max
PC
75(Tc=25°C)
W
VBE(sat)
IC=8A, IB=16mA
2.5max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
20typ
MHz
°C
COB
VCB=10V, f=1MHz
210typ
pF
3.3
1.05
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
40
5
8
10
–5
16
–16
0.6typ
7.0typ
1.5typ
0
0
1
2
3
4
5
0
6
0.2
0.5
1
5
10
50
(V C E =4V)
20000
DC Curr ent Gain h F E
5000
1000
500
5
10
125
˚C
5000
25
Transient Thermal Resistance
10000
Typ
1
˚C
–30
˚C
1000
500
100
0.02
16
0.5
1
f T – I E Characteristics (Typical)
mp)
e Te
Cas
2
10
5
16
5
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
)
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
30000
0.5
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
100
1000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
30
80
50
10
10
s
0µ
s
DC
5
–1
Emitter Current I E (A)
–5
–10 –16
0.05
0.03
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
nk
–0.5
si
0
–0.05 –0.1
40
at
Without Heatsink
Natural Cooling
0.1
he
0.5
ite
1
60
fin
10
1m
In
20
s
ith
Collector Cur rent I C (A)
10
m
W
Cut- off F req uenc y f T (MH Z )
Typ
Ma xim um Powe r Dissipat io n P C (W)
DC Curr ent Gain h F E
0
100 200
Base Current I B (mA)
h FE – I C Characteristics (Typical)
100
0.2
)
4
˚C (
4A
–30
8A
1
8
mp
I C =16A
Collector-Emitter Voltage V C E (V)
10000
12
emp
10
2
Te
I B =1m A
(V C E =4V)
16
se
1. 5m A
3.35
Weight : Approx 2.0g
a. Type No.
b. Lot No.
E
(Ca
3mA
C
5˚C
Collector Current I C (A)
20
1.5
12
6mA
3
Collector Current I C (A)
A
0.65 +0.2
-0.1
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚C /W)
m
12
Collector-Emitter Saturation Voltage V C E (sa t) (V )
A
A
20
40m
m
26
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
+0.2
-0.1
5.45±0.1
1.5
VCC
(V)
0.8
2.15
se T
–55 to +150
1.75
(Ca
Tstg
3.45 ±0.2
3.0
IB
5.5±0.2
ø3.3±0.2
a
b
25˚C
IC
Unit
0.8±0.2
Unit
120
5.5
2SD2082
VCBO
VEBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
2SD2082
1.6
■Electrical Characteristics
Symbol
(2kΩ) (100Ω) E
9.5±0.2
■Absolute maximum ratings (Ta=25°C)
C
B
16.2
Darlington
Symbol
Equivalent
circuit
20
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
145