SANKEN 2SD2083

2SD2083
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383)
IEBO
VEB=6V
10max
mA
6
V
V(BR)CEO
25(Pulse40)
A
hFE
IC=25mA
120min
VCE=4V, IC=12A
2000min
V
2
A
VCE(sat)
IC=12A, IB=24mA
1.8max
PC
120(Tc=25°C)
W
VBE(sat)
IC=12A, IB=24mA
2.5max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
20typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
340typ
pF
5.45±0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
24
2
12
10
–5
24
–24
1.0typ
6.0typ
1.0typ
10
0
0
1
2
3
4
5
0
0.5
6
1
5
Collector-Emitter Voltage V C E (V)
10
50
100
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
20000
10000
DC Curr ent Gain h F E
Typ
5000
1000
500
0.5
1
5
10
125
˚C
5000
25
Transient Thermal Resistance
20000
100
0.2
p)
em
0
˚C
˚C
–30
1000
500
100
0.02
40
0.5
1
10
5
f T – I E Characteristics (Typical)
mp)
2
2.2
40
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
e Te
1
Base-Emittor Voltage V B E (V)
(V C E =4V)
100
1000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
120
100
100
1m
s
146
–10
0.2
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
nk
Emitter Current I E (A)
–5
si
–1
at
–0.5
he
0
–0.1
ite
0.5
fin
Without Heatsink
Natural Cooling
1
In
5
ith
m
Collector Cur rent I C (A)
s
10
50
DC
10
100
W
Ma xim um Powe r Dissipat io n P C (W)
50
Typ
Cut -off Fre quency f T (M H Z )
DC Curr ent Gain h F E
0
500
Base Current I B (mA)
h FE – I C Characteristics (Typical)
10000
10
Cas
I B =1.5m A
12A
6A
1
eT
3m A
20
I C =25A
2
as
5mA
20
(C
8mA
5˚C
30
(V C E =4V)
25
12
Collector Current I C (A)
12mA
3
Collector Current I C (A)
A
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚C/W)
20m
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
A
0.65 +0.2
-0.1
5.45±0.1
B
RL
(Ω)
m
30
2
3
1.05 +0.2
-0.1
VCC
(V)
40
ø3.2±0.1
V
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
2.0±0.1
b
IB
Tstg
a
4.8±0.2
)
IC
19.9±0.3
VEBO
1.8
V
15.6±0.4
9.6
5.0±0.2
µA
2.0
10max
˚C (
120
VCB=120V
emp
VCEO
Unit
ICBO
–30
V
2SD2083
se T
120
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
(Ca
VCBO
■Electrical Characteristics
Symbol
(2kΩ) (100Ω) E
25˚C
Unit
4.0
2SD2083
B
4.0max
■Absolute maximum ratings (Ta=25°C)
C
Application : Driver for Solenoid, Motor and General Purpose
20.0min
Darlington
Symbol
Equivalent
circuit
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150